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PDF STB25NM60N-1 Data sheet ( Hoja de datos )
| Número de pieza | STB25NM60N-1 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STB25NM60Nx - STF25NM60N
STP25NM60N - STW25NM60N
N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET
www.datasheet4u.com
TO-220, TO-220FP, I2PAK, D2PAK, TO-247
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB25NM60N
STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
650 V
650 V
650 V
650 V
650 V
< 0.160 Ω
< 0.160 Ω
< 0.160 Ω
< 0.160 Ω
< 0.160 Ω
21 A
21 A
21 A(1)
21 A
21 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB25NM60N
B25NM60N
STB25NM60N-1
B25NM60N
STF25NM60N
F25NM60N
STP25NM60N
STW25NM60N
P25NM60N
W25NM60N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
June 2008
Rev 12
1/18
www.st.com
18
1 page  
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
www.datasheet4u.com
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD =300 V, ID = 10 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
24.5 ns
18 ns
94 ns
24 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 21 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 23)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 23)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
21
84
1.3
427
7.2
33.6
526
9.1
34.5
A
A
V
ns
µC
A
ns
µC
A
5/18
5 Page 
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Package mechanical data
www.datasheet4u.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
L30 28.90
0.645
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/18
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| PDF Descargar | [ Datasheet STB25NM60N-1.PDF ] | |
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