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Número de pieza | STB80NF55-06 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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® STB80NF55-06
N - CHANNEL 55V - 0.005Ω - 80A TO-262/TO-263
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS( on)
ID
STB80NF55-06 55 V < 0.0065 Ω 80 A
s TYPICAL RDS(on) = 0.005 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)\
s SURFACE-MOUNTING D2PAK (TO-263)
123
3
1
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
I2PAK
TO-262
D2PAK
TO-263
DESCRIPTION
(suffix ”-1”)
(suffix ”T4”)
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
INTERNAL SCHEMATIC DIAGRAM
on-resistance, rugged avalance characteDraistaticSsheet4U.com
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•)
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1999
Va l u e
Un it
55 V
55 V
± 20
V
80 A
57 A
320 A
210
1.43
W
W /o C
7 V/ns
-65 to 175
oC
175 oC
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/7
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DIM.
A
A1
B
B2
C
C2
D
e
E
L
L1
L2
STB80NF55-06
TO-262 (I2PAK) MECHANICAL DATA
MIN.
4.4
2.49
0.7
1.14
0.45
1.23
8.95
2.4
10
13.1
3.48
1.27
mm
TYP.
MAX.
MIN.
4.6 0.173
2.69 0.098
0.93 0.027
1.7 0.044
0.6 0.017
1.36 0.048
9.35 0.352
2.7 0.094
10.4 0.393
13.6 0.515
3.78 0.137
DataShe1.e4t4U.com 0.050
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
DataShee
DataSheet4U.com
L1
L2 D
L
P011P5/E
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet STB80NF55-06.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB80NF55-06 | N-CHANNEL POWER MOSFET | ST Microelectronics |
STB80NF55-06-1 | N-CHANNEL POWER MOSFET | STMicroelectronics |
STB80NF55-06T | N-CHANNEL POWER MOSFET | STMicroelectronics |
STB80NF55-06T4 | N-CHANNEL POWER MOSFET | STMicroelectronics |
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