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PDF STB80NF12 Data sheet ( Hoja de datos )
| Número de pieza | STB80NF12 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STB80NF12 STW80NF12
STP80NF12 STP80NF12FP
N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB80NF12
STP80NF12
STP80NF12FP
STW80NF12
120 V
120 V
120 V
120 V
<0.018 Ω
<0.018 Ω
<0.018 Ω
<0.018 Ω
80 A(*)
80 A(*)
80 A(*)
80 A(*)
s TYPICAL RDS(on) = 0.013Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
TO-220
3
2
1
D²PAK
TO-263
(Suffix “T4”)
3
1
TO-220FP
3
2
1
TO-247
DESCRIPTION
This MOSFET series realized with STMicroelectronics
INTERNAL SCHEMATIC DIAGRAM
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanceDdahtiagSh-heet4U.com
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(*) Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Limited by Package
(2) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value
STB_P_W80NF12
STP80NF12FP
120
120
± 20
80 80(#)
60 60(#)
320 320(#)
300 45
2.0 0.3
10
700
------
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(#) Refer to SOA for the max allovable currente values on FP-type
due to thermal resistance value.
(1) Starting Tj = 25 oC, ID = 40A, VDD = 45V
March 2003
1/12
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Gate Charge vs Gate-source Voltage
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
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Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
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STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
et4U.com
TAPE AND REEL SHIPMENT (suffix ”T4”)*
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REEL MECHANICAL DATA
mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5
0.059
C 12.8 13.2 0.504 0.520
D 20.2
0.795
G 24.4 26.4 0.960 1.039
N 100
3.937
T 30.4 1.197
TAPE MECHANICAL DATA
DIM.
mm
MIN. MAX.
inch
MIN. MAX.
A0
10.5
10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1
1.59
1.61 0.062 0.063
E
1.65
1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082
R 50
1.574
T
0.25
0.35 .0.0098 0.0137
W 23.7 24.3 0.933 0.956
BASE QTY
1000
BULK QTY
1000
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STB80NF12.PDF ] | |
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