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Número de pieza | STB80NF10 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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No Preview Available ! STB80NF10
STP80NF10
N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK
low gate charge STripFET™ II Power MOSFET
Features
Type
STP80NF10
STB80NF10
VDSS
100 V
100 V
RDS(on)
max
< 0.015 Ω
< 0.015 Ω
■ Exceptional dv/dt capability
■ 100% Avalanche tested
■ Application oriented characterization
ID
80 A
80 A
Applications
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STP80NF10
P80NF10@
STB80NF10T4
B80NF10@
Package
TO-220
D²PAK
Packaging
Tube
Tape and reel
April 2009
Doc ID 6958 Rev 18
1/14
www.st.com
14
1 page STB80NF10, STP80NF10
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
ISD
ISDM(1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%
Test conditions
ISD = 80 A, VGS = 0
ISD=80 A, VDD = 50 V
di/dt = 100 A/µs,
Tj=150 °C
Min. Typ. Max Unit
- 80 A
- 320 A
- 1.3 V
106
- 450
8.5
ns
nC
A
Doc ID 6958 Rev 18
5/14
5 Page STB80NF10, STP80NF10
Package mechanical data
D²PAK (TO-263) mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
A1 0.03
0.23
0.001
0.009
b 0.70
0.93
0.027
0.037
b2 1.14
1.70
0.045
0.067
c 0.45
0.60
0.017
0.024
c2 1.23
1.36
0.048
0.053
D 8.95
9.35
0.352
0.368
D1 7.50
0.295
E 10
E1 8.50
10.40
0.394
0.334
0.409
e 2.54
0.1
e1 4.88
5.28
0.192
0.208
H 15
15.85
0.590
0.624
J1 2.49
2.69
0.099
0.106
L 2.29
2.79
0.090
0.110
L1 1.27
1.40
0.05
0.055
L2 1.30
1.75
0.051
0.069
R 0.4
0.016
V2 0°
8° 0°
8°
0079457_M
Doc ID 6958 Rev 18
11/14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet STB80NF10.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB80NF10 | N-CHANNEL POWER MOSFET | ST Microelectronics |
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