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PDF STD60NF55L Data sheet ( Hoja de datos )
| Número de pieza | STD60NF55L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD60NF55L
N-CHANNEL 55V - 0.012Ω - 60A DPAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD60NF55L
55V < 0.015Ω 60A
s TYPICAL RDS(on) = 0.012Ω
s LOW THRESHOLD DRIVE
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility..
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s AUTOMOTIVE
s MOTOR CONTROL
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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2002
Value
55
55
± 15
60
42
240
110
0.73
16
400
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
– 55 to 175
°C
(1)ISD ≤40A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj=25°C, ID=30A, VDD=20V
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STD60NF55L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD60NF55L.PDF ] | |
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| STD60NF55L | N-CHANNEL POWER MOSFET | ST Microelectronics |
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