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Número de pieza | STD60N55 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | ST Microelectronics | |
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General features
STD60N55-1
STD60N55
N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK
MDmesh™ low voltage Power MOSFET
PRELIMINARY DATA
Type
STD60N55
STD60N55-1
VDSS
55V
55V
RDS(on)
<10.5mΩ
<10.5mΩ
ID Pw
65A 110W
65A 110W
■ Standard threshold drive
■ 100% avalanche tested
3
1
DPAK
IPAK
3
2
1
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique “Single Feature Size™“
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
Internal schematic diagram
extremely high packing density for low on- DataSheet4U.com
resistance, rugged avalanche characteristics and
low gate charge.
Applications
■ Switching application
DataShee
Order codes
Part number
STD60N55
STD60N55-1
Marking
D60N55
D60N55-1
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
July 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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STD60N55 - STD60N55-1
Electrical characteristics
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Table 5. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 3)
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 3)
Min. Typ. Max. Unit
20 ns
50 ns
35 ns
11.5 ns
Table 6.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
VSD Forward on voltage
ISD = 65A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 65A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C(see Figure 5)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
65 A
260 A
1.5 V
47 ns
87 nC
3.7 A
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STD60N55 - STD60N55-1
6 Revision history
Table 7. Revision history
Date
Revision
17-Jul-2005
1 First release
Revision history
Changes
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11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet STD60N55.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD60N55 | N-channel Power MOSFET | ST Microelectronics |
STD60N55-1 | N-channel Power MOSFET | ST Microelectronics |
STD60N55F3 | N-CHANNEL Power MOSFET | ST Microelectronics |
STD60N55F3 | N-channel Power MOSFET | STMicroelectronics |
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