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VG26S18165D の電気的特性と機能

VG26S18165DのメーカーはVanguard Microelectronics Limitedです、この部品の機能は「CMOS DRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 VG26S18165D
部品説明 CMOS DRAM
メーカ Vanguard Microelectronics Limited
ロゴ Vanguard Microelectronics Limited ロゴ 




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VG26S18165D Datasheet, VG26S18165D PDF,ピン配置, 機能
www.DataSheet4U.com
VIS
VG26(V)(S)18165C/VG26(V)(S)18165D
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Description
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is
fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. Self-
refresh is supported and CBR cycles are being performed. lt is packaged in JEDEC standard 42-pin 400mil SOJ and
50(44)-pin 400mil TSOPII.
Features
• Single 5V or 3.3V only power supply
• High speed tRAC access time: 50/60ns
• Extended-data-out (EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
DataSheet4U.com
- Hidden refresh
- Self-refresh
• Refresh interval:
- RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms
- Self-refresh: 1024 cycles
• JEDEC standard pinout: 44-pin 400mil SOJ and 50(44)-pin 400mil TSOPII
DataShee
DataSheet4U.com
Document:1G5-0179
DataSheet4 U .com
Rev.2
Page 1

1 Page





VG26S18165D pdf, ピン配列
www.DataSheet4U.com
VIS
VG26(V)(S)18165C/VG26(V)(S)18165D
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Block Diagram
WE
LCAS
UCAS
CAS
A0
et4U.coAm1
A2
A3
A4
A5
A6
A7
A8
A9
RAS
NO.2 CLOCK
GENERATOR
COLUMN-
ADDRESS
BUFFERS (10)
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW -
ADDRESS
BUFFERS (10)
NO.1 CLOCK
GENERATOR
CONTROL
LOGIC
DATA - IN BUFFER
COLUMN
DECODER
DataSheet4U.com 1024
SENSE AMPLIFIERS
I/0 GATING
1024x16
DATA - OUT
BUFFER
1024 x 1024 x 16
MEMORY
ARRAY
DQ.. 1
DQ16
OE
DataShee
Vcc
Vss
DataSheet4U.com
Document:1G5-0179
DataSheet4 U.com
Rev.2
Page 3


3Pages


VG26S18165D 電子部品, 半導体
www.DataSheet4U.com
VIS
VG26(V)(S)18165C/VG26(V)(S)18165D
1,048,576 x 16 - Bit
CMOS Dynamic RAM
DC Characteristics; 5- Volt Verion (Ta = 0 to + 70 °C VCC= + 5V ±10 %,VSS = 0V)
Parameter
Symbol
Test Conditions
VG26(S)18165
Unit Notes
-5 -6
Min Max Min Max
Operating current
ICC1 RAS cycling
LCAS / UCAS cycling
tRC = min
- 160
- 145 mA
1, 2
Standby current
ICC2 TTL interface
RAS,LCAS / UCAS = VIH
Dout = High-Z
2 - 2 mA
CMOS interface
RAS, CAS Vcc -0.2V
Dout = High-Z
1 - 1 mA
RAS-only
refresh current
ICC3 RAS cycling,
LCAS / UCAS = VIH
tRC = min
- 160
- 145 mA
1, 2
EDO page mode
current
ICC4 tRC = min
- 90
- 80 mA 1, 3
CAS-before-RAS
refresh current
ICC5 tRC = min
RAS, LCAS / UCAS cycling
- 160
1, 2
- 145 mA
Self-refresh current
et4U.com
Input leakage current
ICC6
tRAS 100µs
DataSheet4U.com
- 500
- 500 µA
ILI 0V VIN VCC + 0.5V
-5 5 -5 5 µA
DataShee
Output leakage current
Output high Voltage
ILO
VOH
0V VOUT VCC + 0.5V
Dout = Disable
IOH = - 5mA
-5 5 -5 5 µA
2.4 - 2.4 - V
Output low voltage
VOL IOL = + 4.2mA
- 0.4
- 0.4 V
Notes:
1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. ICC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For ICC4, address can be changed once or less within one EDO page mode cycle time.
DataSheet4U.com
Document:1G5-0179
Rev.2
D a 4 U . t ca oS mh e e t
Page 6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
VG26S18165CJ-5

1/048/576 x 16 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor
Vanguard International Semiconductor
VG26S18165CJ-6

1/048/576 x 16 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor
Vanguard International Semiconductor
VG26S18165D

CMOS DRAM

Vanguard Microelectronics Limited
Vanguard Microelectronics Limited


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