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VG26V18165CのメーカーはVanguard Microelectronics Limitedです、この部品の機能は「CMOS DRAM」です。 |
部品番号 | VG26V18165C |
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部品説明 | CMOS DRAM | ||
メーカ | Vanguard Microelectronics Limited | ||
ロゴ | |||
このページの下部にプレビューとVG26V18165Cダウンロード(pdfファイル)リンクがあります。 Total 26 pages
www.DataSheet4U.com
VIS
VG26(V)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Description
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is
fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. Self-
refresh is supported and CBR cycles are being performed. lt is packaged in JEDEC standard 42-pin 400mil SOJ and
50(44)-pin 400mil TSOPII.
Features
• Single 5V or 3.3V only power supply
• High speed tRAC access time: 50/60ns
• Extended-data-out (EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 4 refresh modes:
- RAS only refresh
- CAS - before - RAS refresh
DataSheet4U.com
- Hidden refresh
- Self-refresh
• Refresh interval:
- RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms
- Self-refresh: 1024 cycles
• JEDEC standard pinout: 42-pin 400mil SOJ and 50(44)-pin 400mil TSOPII
DataShee
DataSheet4U.com
Document:1G5-0179
DataSheet4 U .com
Rev.3
Page 1
1 Page www.DataSheet4U.com
VIS
VG26(V)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Block Diagram
WE
LCAS
UCAS
CAS
A0
et4U.coAm1
A2
A3
A4
A5
A6
A7
A8
A9
RAS
NO.2 CLOCK
GENERATOR
COLUMN-
ADDRESS
BUFFERS (10)
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW -
ADDRESS
BUFFERS (10)
NO.1 CLOCK
GENERATOR
CONTROL
LOGIC
DATA - IN BUFFER
COLUMN
DECODER
DataSheet4U.com 1024
SENSE AMPLIFIERS
I/0 GATING
1024x16
DATA - OUT
BUFFER
1024 x 1024 x 16
MEMORY
ARRAY
DQ. 1
.
DQ16
OE
DataShee
Vcc
Vss
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Document:1G5-0179
DataSheet4 U .com
Rev.3
Page 3
3Pages www.DataSheet4U.com
VIS
VG26(V)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
DC Characteristics; 5- Volt Verion (Ta = 0 to + 70 °C, VCC= + 5V ±10 %,VSS = 0V)
Parameter
Symbol
Test Conditions
VG26(S)18165
Unit Notes
-5 -6
Min Max Min Max
Operating current
ICC1 RAS cycling
LCAS / UCAS cycling
tRC = min
- 160
- 145 mA
1, 2
Standby current
ICC2 TTL interface
RAS,LCAS / UCAS = VIH
Dout = High-Z
2 - 2 mA
CMOS interface
RAS, CAS ³ Vcc -0.2V
Dout = High-Z
1 - 1 mA
RAS-only
refresh current
ICC3 RAS cycling,
LCAS / UCAS = VIH
tRC = min
- 160
- 145 mA
1, 2
EDO page mode
current
ICC4 tRC = min
- 90
- 80 mA 1, 3
CAS-before-RAS
refresh current
ICC5 tRC = min
RAS, LCAS / UCAS cycling
- 160
1, 2
- 145 mA
Self-refresh current
et4U.com
Input leakage current
ICC6
tRAS ³ 100ms
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- 500
- 500 mA
ILI 0V £ VIN £ VCC + 0.5V
-5 5 -5 5 mA
Output leakage current
Output high Voltage
ILO
VOH
0V £ VOUT £ VCC + 0.5V
Dout = Disable
IOH = - 5mA
-5 5 -5 5 mA
2.4 - 2.4 - V
Output low voltage
VOL IOL = + 4.2mA
- 0.4
- 0.4 V
Notes:
1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. ICC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For ICC4, address can be changed once or less within one EDO page mode cycle time.
DataShee
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Document:1G5-0179
DataSheet4 U .com
Rev.3
Page 6
6 Page | |||
ページ | 合計 : 26 ページ | ||
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PDF ダウンロード | [ VG26V18165C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VG26V18165C | CMOS DRAM | Vanguard Microelectronics Limited |
VG26V18165CJ-5 | 1/048/576 x 16 - Bit CMOS Dynamic RAM | Vanguard International Semiconductor |
VG26V18165CJ-6 | 1/048/576 x 16 - Bit CMOS Dynamic RAM | Vanguard International Semiconductor |
VG26V18165D | CMOS DRAM | Vanguard Microelectronics Limited |