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VG2617405 の電気的特性と機能

VG2617405のメーカーはVanguard Microelectronics Limitedです、この部品の機能は「CMOS DRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 VG2617405
部品説明 CMOS DRAM
メーカ Vanguard Microelectronics Limited
ロゴ Vanguard Microelectronics Limited ロゴ 




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VG2617405 Datasheet, VG2617405 PDF,ピン配置, 機能
www.DataSheet4U.com
VIS
Description
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).
Features
• Single 5V(±10 %) or 3.3V(±10 %) only power supply
• High speed tRAC acess time: 50/60ns
• Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
DataSheet4U.com
• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
• 4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
DataShee
DataSheet4U.com
Document:1G5-0124
DataSheet4 U.com
Rev.1
Page 1

1 Page





VG2617405 pdf, ピン配列
www.DataSheet4U.com
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Block Diagram
WE
CAS
A0
A1
A2
et4U.coAm3
A4
A5
A6
A7
A8
A9
A10
RAS
NO. 2 CLOCK
GENERATOR
COLUMN
ADDRESS
BUFFERS (11)
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW
ADDRESS
BUFFERS (11)
NO. 1 CLOCK
GENERATOR
CONTROL
LOGIC
DATA-IN BUFFER
COLUMN
DECODER
2048
DataSheet4U.com
SENSE AMPLIFIERS
I/O GATING
2048x4
DATA-OUT
BUFFER
2048x2048x4
MEMORY
ARRAY
DQ. 1
.
DQ4
OE
DataShee
Vcc
Vss
DataSheet4U.com
Document:1G5-0124
DataSheet4 U .com
Rev.1
Page 3


3Pages


VG2617405 電子部品, 半導体
www.DataSheet4U.com
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
DC Characteristics; 5- Volt Verion
(Ta = 0 to + 70 °C, VCC= + 5V ±10 %,VSS = 0V)
Parameter
Operating current
LOW
power
S-version
Standby
Current
Standard
power
version
et4U.com
RAS-only
refresh current
EDO page mode
current
CAS-before-RAS
refresh current
Self-refresh current
(S - Version)
CAS- before- RAS long
refresh current
(S-Version)
Symbol
Test Conditions
VG26(V)(S)17405
Unit Notes
-5 -6
Min Max Min Max
ICC1 RAS cycling
CAS, cycling
tRC = min
- 120
- 110 mA 1, 2
TTL interface
RAS, CAS = VIH
Dout = High-Z
- 2 - 2 mA
CMOS interface
RAS, CAS Vcc -0.2V
ICC2 Dout = High-Z
TTL interface
RAS, CAS = VIH
Dout = High-Z
- 0.25
- 0.25 mA
2 - 2 mA
CMOS interface
RAS, CAS Vcc -0.2V
Dout = High-Z
1 - 1 mA
ICC3 RAS cyclinDg,aCtaASShe=eVt4IHU.com
tRC = min
- 120
- 110 mA 1, 2
ICC4
tRC = min
- 90
- 80 mA 1, 3
ICC5
ICC8
ICC9
tRC = min
RAS, CAS cycling
tRAS 100µs
Standby: VCC- 0.2V RAS
CAS before RAS refresh:
2048 cycles / 128ms
RAS, CAS: 0V VIL 0.2V
VCC- 0.2V VIH VIH (Max)
Dout = High-Z, tRAS 300ns
- 120
- 110 mA 1, 2
- 350
- 500
- 350 µA
- 500 µA
DataShee
DataSheet4U.com
Document:1G5-0124
D a t a4 US. hc eo em t
Rev.1
Page 6

6 Page



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共有リンク

Link :


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