(PDF) TIM1414-10LA-252 Datasheet - Microwave Power GaAs FET

Número de pieza	TIM1414-10LA-252
Descripción	Microwave Power GaAs FET
Fabricantes	Toshiba
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No Preview Available ! www.DataSheet4U.com TOSHIBA TIM1414-10LA-252 Oct. 1999 1. RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION P1dB VDS= 9V G1dB f =13.75-14.5GHz MIN. TYP. MAX. UNIT 39.0 39.5 - dBm 4.5 5.5 - dB IDS ηadd - 4.0 5.0 A - 23 - % 3rd Order Intermodulation IM3 2-tone test -42 -45 - dBc Distortion Po=29dBm(SCL) Channel Temperature Rise ∆Tch VDS x IDS x Rth - - 90 °C DataSheet4U.com 2. ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) DataShee CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITION gm VDS= 3V IDS= 4.8A VGSoff VDS= 3V IDS= 145mA IDSS VDS= 3V VGS=0V VGSO IGS= -145µA MIN. TYP. MAX. UNIT - 2800 - mS -2.0 -3.5 -5.0 V - 10.0 11.5 A -5 - - V Rth(c-c) Channel to Case - 2.0 2.5 °C/W Applications Engineering Solid-State Engineering Department TOSHIBA CORPORATION, Komukai Operations DataSheet4U.com DataSheet4 U .com −1− DataSheet4U.com 1 page

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PDF TIM1414-10LA-252 Data sheet ( Hoja de datos )