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PDF STB5NC90Z-1 Data sheet ( Hoja de datos )
| Número de pieza | STB5NC90Z-1 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP5NC90Z - STP5NC90ZFP
STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NC90Z/FP
900V
< 2.5Ω
4.6 A
STB5NC90Z/-1
900V
< 2.5Ω
4.6 A
s TYPICAL RDS(on) = 2.1Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
TO-220
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
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APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
December 2002
Value
Unit
STP(B)5NC90Z(-1) STP5NC90ZFP
900 V
900 V
± 25 V
4.6
4.6(*)
A
2.9
2.9(*)
A
18 18 A
125 40 W
1 0.32 W/°C
±50 mA
3 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD ≤4.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*).Limited only by maximum temperature allowed
1/13
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Transconductance
STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
et4U.com
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DataShee
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1
et4U.com
DIM.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
TO-263 (D2PAK) MECHANICAL DATA
MIN.
4.4
2.49
0.7
1.14
0.45
1.21
8.95
10
4.88
15
1.27
1.4
mm
TYP.
MAX.
MIN.
4.6 0.173
2.69
0.098
0.93
0.027
1.7 0.044
0.6 0.017
1.36
0.047
9.35
0.352
10.4
0.393
5.28
0.192
15.85
0.590
1.4 0.050
1.75
0.055
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D
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
A
C2 DET AIL "A"
C
DET AIL "A"
A1
B2
B
EG
L2 L L3
P011P6/E
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| PDF Descargar | [ Datasheet STB5NC90Z-1.PDF ] | |
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