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PDF STB55NF03L-1 Data sheet ( Hoja de datos )
| Número de pieza | STB55NF03L-1 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP55NF03L
STB55NF03L STB55NF03L-1
N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP55NF03L
STB55NF03L
STB55NF03L-1
30 V
30 V
30 V
<0.013 Ω
<0.013 Ω
<0.013 Ω
55 A
55 A
55 A
s TYPICAL RDS(on) = 0.01 Ω
s OPTIMIZED FOR HIGH SWITCHING
OPERATIONS
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE
3
1
D2PAK
TO-263
123
I2PAK
TO-262
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
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s LOW VOLTAGE DC-DC CONVERTERS
s HIGH CURRENT, HIGH SWITCHING SPEED
s HIGH EFFICIENCY SWITCHING CIRCUITS
DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
March 2002
.
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Value
30
30
± 16
55
39
220
80
0.53
-60 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
1/11
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Normalized Gate Threshold Voltage vs Temperature
STP55NF03L STB55NF03L/-1
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
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STP55NF03L STB55NF03L/-1
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STB55NF03L-1.PDF ] | |
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