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PDF STB55NF03L Data sheet ( Hoja de datos )
| Número de pieza | STB55NF03L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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® STB55NF03L
N-CHANNEL 30V - 0.01 Ω - 55A D2PAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB55NF03L
30 V < 0.013 Ω 55 A
s TYPICAL RDS(on) = 0.01 Ω
s OPTIMIMIZED FOR HIGH SWITCHING
OPERATIONS
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
1
D2PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
APPLICATIONS
INTERNAL SCHEMATIC DIAGRAM
s LOW VOLTAGE DC-DC CONVERTERSDataSheet4U.com
s HIGH CURRENT, HIGH SPEED SWITCHING
s HIGH EFFICIENCY SWITCHING CIRCUITS
DataShee
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•)
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
10/01/2000
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Va l u e
30
30
± 20
55
39
220
80
0.53
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /o C
oC
oC
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Normalized Gate Threshold Voltage vs
Temperature
STB55NF03L
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STB55NF03L.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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