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PDF STB55NE06 Data sheet ( Hoja de datos )
| Número de pieza | STB55NE06 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STB55NE06
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
VDSS
RDS(on)
ID
ST B55NE06
60 V < 0.022 Ω 55 A
s TYPICAL RDS(on) = 0.019 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s HIGH dv/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
3
1
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
D2PAK
TO-263
DESCRIPTION
(suffix ”T4”)
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
INTERNAL SCHEMATIC DIAGRAM
less critical alignment steps therefore a reDmataarSk-heet4U.com
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
DataShee
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( •)
Ptot
Drain-source Volt age (VGS = 0)
Drain- gate Volt age (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
December 1997
Value
Uni t
60 V
60 V
± 20
V
55 A
39 A
220 A
130
0. 96
W
W/oC
7 V/ ns
-65 to 175
oC
175 oC
(1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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Normalized Gate Threshold Voltage vs
Temperature
STB55NE06
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STB55NE06.PDF ] | |
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