|
|
PDF STB50NE10L Data sheet ( Hoja de datos )
| Número de pieza | STB50NE10L | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STB50NE10L (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
® STB50NE10L
N - CHANNEL 100V - 0.020Ω - 50A - D2PAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STB50NE10L
100 V <0.025 Ω
50 A
s TYPICAL RDS(on) = 0.020 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
3
1
SALES OFFICE
D2PAK
DESCRIPTION
This Power MOSFET is the latest development of
TO-263
(suffix "T4")
STMicroelectronics unique "Single Feature
Size™ " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
INTERNAL SCHEMATIC DIAGRAM
therefore a remarkable manufacDtautrainSgheet4U.com
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
Value
Unit
100 V
100 V
± 20
V
50 A
35 A
200 A
150 W
1 W/oC
6 V/ns
-65 to 175
oC
175 oC
(1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
DataSheet4U.com
DataShee
DataSheet4 U .com
DataSheet4U.com
1 page  
www.DataSheet4U.com
STB50NE10L
et4U.com
DataSheet4U.com
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
.
DataSheet4U.com
DataSheet4 U .com
5/5
DataSheet4U.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet STB50NE10L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STB50NE10 | N-CHANNEL POWER MOSFET | ST Microelectronics |
| STB50NE10L | N-CHANNEL POWER MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |