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PDF STB50NE10 Data sheet ( Hoja de datos )
| Número de pieza | STB50NE10 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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® STB50NE10
N - CHANNEL 100V - 0.021Ω - 50A - D2PAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB50NE10
100 V <0.027 Ω
50 A
s TYPICAL RDS(on) = 0.021 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
3
1
SALES OFFICE
D2PAK
DESCRIPTION
This Power MOSFET is the latest development of
TO-263
(suffix ”T4”)
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
INTERNAL SCHEMATIC DIAGRAM
therefore a remarkable manufaDctautrainSgheet4U.com
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM (•)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1998
Va l u e
Un it
100 V
100 V
± 20
V
50 A
35 A
200 A
150 W
1 W /o C
6 V/ns
-65 to 175
oC
175 oC
( 1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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Normalized Gate Threshold Voltage vs
Temperature
STB50NE10
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STB50NE10.PDF ] | |
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