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ST2305 の電気的特性と機能

ST2305のメーカーはStanson Technologyです、この部品の機能は「P Channel Enchancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ST2305
部品説明 P Channel Enchancement Mode MOSFET
メーカ Stanson Technology
ロゴ Stanson Technology ロゴ 




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ST2305 Datasheet, ST2305 PDF,ピン配置, 機能
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P Channel Enchancement Mode MOSFET
-3.5A
ST2305
DESCRIPTION
The ST2305 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
12
1.Gate 2.Source 3.Drain
3
S05YA
FEATURE
z -10V/-3.5A, RDS(ON) = 50m-ohm
@VGS = -4.5V
z -10V/-3.0A, RDS(ON) = 70m-ohm
@VGS = -2.5V
z -10V/-2.0A, RDS(ON)= 105m-ohm
@VGS=-1.8V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
12
S: Subcontractor Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1

1 Page





ST2305 pdf, ピン配列
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P Channel Enchancement Mode MOSFET
-3.5A
ST2305
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -10
V
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA -0.45
-1.5 V
Gate Leakage Current
IGSS VDS=0V,VGS=+/-12V
100 nA
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55
-1
-10 uA
ID(on) VDS -5V,VGS=-4.5V -6
VDS -5V,VGS=-2.5V -3
A
RDS(on)
gfs
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-2.0A
VGS=-1.8V,ID=-2.0A
VDS=-5V,ID=-3.5V
0.045 0.05
0.55 0.07
0.09 0.105
8.5
S
VSD IS=-1.6A,VGS=0V
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-4.5V
ID -3.5A
VDS=-10V,VGS=0V
F=1MHz
VDD=-10V,RL=6
ID=-1.0A,VGEN=-4.5V
RG=6
10 12
2 nC
2
1200
300 pF
210
13 25
20 35 nS
42 70
20 35
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 3


3Pages


ST2305 電子部品, 半導体
www.DataSheet4U.com
P Channel Enchancement Mode MOSFET ST2305
-3.5A
TYPICAL CHARACTERICTICS (25 Unless noted)
Page 6

6 Page



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共有リンク

Link :


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N Channel Enchancement Mode MOSFET

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ST2303

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