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ST2303 の電気的特性と機能

ST2303のメーカーはStanson Technologyです、この部品の機能は「P Channel Enchancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ST2303
部品説明 P Channel Enchancement Mode MOSFET
メーカ Stanson Technology
ロゴ Stanson Technology ロゴ 




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ST2303 Datasheet, ST2303 PDF,ピン配置, 機能
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P Channel Enchancement Mode MOSFET
-1.7A
ST2303
DESCRIPTION
The ST2303 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
12
1.Gate 2.Source 3.Drain
3
S03YA
FEATURE
z -30V/-2.6A, RDS(ON) = 130m-ohm
@VGS = -10V
z -30V/-2.0A, RDS(ON) = 180m-ohm
@VGS = -4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
12
S: Subcontractor Y: Year Code W: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page 1

1 Page





ST2303 pdf, ピン配列
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P Channel Enchancement Mode MOSFET
-1.7A
ST2303
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-10uA -30
V
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250uA -1.0
-3.0 V
Gate Leakage Current
IGSS VDS=0V,VGS=+20V
+100 nA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
ID(on)
VDS=-30V,VGS=0V
VDS=-30V,VGS=0V
TJ=55
VDS -5V,VGS=-10V
-6
-1
-10 uA
A
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
RDS(on)
gfs
VSD
VGS=-10V,ID=-2.6A
VGS=-4.5V,ID=-2.0A
VDS=-10V,ID=-1.7V
IS=-1.25A,VGS=0V
0.095 0.130
0.125 0.180
2.4 S
-0.8 -1.2 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-15V,VGS=-10V
ID -1.7A
VDS=-15V,VGS=0V
F=1MHz
VDD=-15V,RL=15
ID=-1.0A,VGEN=-10V
RG=6
5.8 10
0.8 nC
1.5
226
87 PF
19
9 20
9 20 nS
18 35
6 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
Page3


3Pages


ST2303 電子部品, 半導体
www.DataSheet4U.com
P Channel Enchancement Mode MOSFET ST2303
-1.7A
TYPICAL CHARACTERICTICS (25 Unless noted)
Page 6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
ST2301

P Channel Enchancement Mode MOSFET

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ST2301A

P Channel Enhancement Mode MOSFET

Stanson Technology
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ST2302

N Channel Enchancement Mode MOSFET

Stanson Technology
Stanson Technology
ST2303

P Channel Enchancement Mode MOSFET

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Stanson Technology


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