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PDF STQ1NK60ZR Data sheet ( Hoja de datos )
| Número de pieza | STQ1NK60ZR | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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STN1NK60Z,
STQ1NK60ZR
N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™
Power MOSFETs in SOT-223 and TO-92 packages
Datasheet - production data
Features
4
3
2
1
SOT-223
TO-92 (Ammopak)
Figure 1. Internal schematic diagram
D(2,4)
G(1)
S(3)
AM01476v1
Order codes
VDS RDS(on)max ID PTOT
STN1NK60Z
600 V
STQ1NK60ZR-AP
15 Ω
3.3 W
0.3 A
3W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• ESD improved capability
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STN1NK60Z
STQ1NK60ZR-AP
Table 1. Device summary
Marking
Package
1NK60Z
1NK60ZR
SOT-223
TO-92
Packaging
Tape and reel
Ammopak
July 2014
This is information on a product in full production.
DocID9509 Rev 14
1/18
www.st.com
1 page  
STN1NK60Z, STQ1NK60ZR
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 5.5 - ns
VDD = 300 V, ID = 0.4 A, - 5 - ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
- 13 - ns
- 28 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
VGS=0, ISD = 0.8 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 0.8 A,
di/dt = 100 A/µs,
VDD = 20 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 0.8 A,
di/dt = 100 A/µs,
VDD = 20V, Tj = 150 °C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
0.8 A
2.4 A
1.6 V
135 ns
216 nC
3.2 A
140 ns
224 nC
3.2 A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
30 - - V
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
DocID9509 Rev 14
5/18
18
5 Page 
STN1NK60Z, STQ1NK60ZR
Package mechanical data
Figure 24. SOT-223 mechanical data drawing
Dim.
A
A1
B
B1
c
D
e
e1
E
H
V
Table 10. SOT-223 mechanical data
mm
Min.
Typ.
0.02
0.60 0.70
2.9 3.0
0.24 0.26
6.30 6.50
2.30
4.60
3.30 3.50
6.70 7.0
0046067_N
Max.
1.80
0.10
0.85
3.15
0.35
6.70
6.70
3.70
7.30
10°
DocID9509 Rev 14
11/18
18
11 Page | ||
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