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STQ1HNK60RのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL MOSFET」です。 |
部品番号 | STQ1HNK60R |
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部品説明 | N-CHANNEL MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTQ1HNK60Rダウンロード(pdfファイル)リンクがあります。 Total 15 pages
www.DataSheet4U.com
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STD1NK60
STD1NK60-1
STQ1HNK60R
STN1HNK60
600 V
600 V
600 V
600 V
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
1A
1A
0.4 A
0.4 A
30 W
30 W
3W
3.3 W
s TYPICAL RDS(on) = 8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ESD IMPROVED CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 1: Package
TO-92 (Ammopack)
3
1
DPAK
3
2
1
IPAK
2
3
2
1
SOT-223
Figure 2: Internal Schematic Diagram
APPLICATIONS
s LOW POWER BATTERY CHARGERS
s SWITH MODE LOW POWER
SUPPLIES(SMPS)
s LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STD1NK60T4
STD1NK60-1
STQ1HNK60R
STQ1HNK60R-AP
STN1HNK60
Marking
D1NK60
D1NK60
1HNK60R
1HNK60R
1HNK60
November 2004
Package
DPAK
IPAK
TO-92
TO-92
SOT-223
Packaging
TAPE & REEL
TUBE
BULK
AMMOPAK
TAPE & REEL
Rev. 2
1/15
1 Page STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15 V, ID= 0.5 A
VDS = 25V, f = 1 MHz, VGS = 0
VDD = 300 V, ID = 0.5 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure
21)
VDD = 480V, ID = 1 A,
VGS = 10V, RG= 4.7 Ω
(see, Figure 23)
Min.
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 1.0 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 25°C
(see test circuit, Figure 22)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 22)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
1
156
23.5
3.8
6.5
5
19
25
7
1.1
3.7
Typ.
140
240
3.3
229
377
3.3
Max.
10
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Max.
1
4
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
3/15
3Pages STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 16: Source-Drain Forward Characteris-
tics
Figure 19: Normalized BVDSS vs Temperature
Figure 17: Maximum Avalanche Energy vs
Temperature
Figure 20: Max Id Current vs Tc
6/15
6 Page | |||
ページ | 合計 : 15 ページ | ||
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部品番号 | 部品説明 | メーカ |
STQ1HNK60R | N-CHANNEL MOSFET | ST Microelectronics |
STQ1HNK60R | N-CHANNEL MOSFET | STMicroelectronics |