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STP10NK70Z の電気的特性と機能

STP10NK70ZのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP10NK70Z
部品説明 N-CHANNEL Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP10NK70Z Datasheet, STP10NK70Z PDF,ピン配置, 機能
( DataSheet : www.DataSheet4U.com )
STP10NK70ZFP
STP10NK70Z
N-CHANNEL 700V - 0.75- 8.6A - TO220-TO220FP
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STP10NK70Z 700 V <0.85
STP10NK70ZFP 700 V <0.85
ID
8.6 A
8.6 A
Pw
110 W
35 W
s EXTREMELY HIGH dv/dt CAPABILITY
s IMPROVED ESD CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Sales Type
STP10NK70Z
STP10NK70ZFP
Marking
P10NK70Z
P10NK70ZFP
Package
TO-220
TO-220FP
Packaging
TUBE
TUBE
August 2005
www.DataSheet4U.com
Rev 2
1/13
wwwww.wD.astt.acoSmheet4U.1c3om

1 Page





STP10NK70Z pdf, ピン配列
STP10NK70Z - STP10NK70ZFP
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 1mA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
VGS = ±20V, VDS = 0
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 4.5 A
Min.
700
3
Typ.
3.75
0.75
Max.
1
50
±10
4.5
0.85
Unit
V
µA
µA
µA
V
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =15V, ID = 4.5A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 560V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=560V, ID = 9 A
VGS =10V
(see Figure 17)
Min.
Typ.
7.7
2000
190
41
Max.
Unit
S
pF
pF
pF
98 pF
64 90 nC
12 nC
33 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=350 V, ID=4.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=350 V, ID=4.5A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=560 V, ID=9A,
RG=4.7Ω, VGS=10V
(see Figure 18)
Min. Typ. Max. Unit
22 ns
19 ns
46 ns
19 ns
11 ns
10 ns
22 ns
3/13


3Pages


STP10NK70Z 電子部品, 半導体
2 Electrical characteristics
Figure 7. Transconductance
STP10NK70Z - STP10NK70ZFP
Figure 8. Static Drain-Source on Resistance
Figure 9. Gate Charge vs Gate -Source
Voltage
Figure 11. Capacitance Variations
Figure 10. Normalized Gate Threshold Voltage Figure 12. Normalized on Resistance vs
vs Temperatute
Temperature
6/13

6 Page



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部品番号部品説明メーカ
STP10NK70Z

N-CHANNEL Power MOSFET

ST Microelectronics
ST Microelectronics
STP10NK70ZFP

N-CHANNEL Power MOSFET

ST Microelectronics
ST Microelectronics


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