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STP10NK80ZFP の電気的特性と機能

STP10NK80ZFPのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP10NK80ZFP
部品説明 N-CHANNEL Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP10NK80ZFP Datasheet, STP10NK80ZFP PDF,ピン配置, 機能
STP10NK80Z, STP10NK80ZFP,
STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™
Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
Type
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
VDSS
800V
800V
800V
RDS(on)
<0.90Ω
<0.90Ω
<0.90Ω
ID
9A
9A
9A
Pw
160 W
40 W
160 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeability
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
Applications
Switching application
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Part number
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
Marking
P10NK80Z
P10NK80ZFP
W10NK80Z
Package
TO-220
TO-220FP
TO-247
Packaging
Tube
Tube
Tube
March 2012
This is information on a product in full production.
Doc ID 8911 Rev 7
1/17
www.st.com
17

1 Page





STP10NK80ZFP pdf, ピン配列
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDSS
VDGR
VGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20kΩ)
Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt(3) Peak diode recovery voltage slope
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD 9 A, di/dt 200 A/µs,VDD V(BR)DSS, Tj TJMAX
Value
Unit
TO-220/ TO-247 TO-220FP
800
800
± 30
9
6
36
160
1.28
4
4.5
--
9(1)
6(1)
36(1)
40
0.32
2500
V
V
V
A
A
A
W
W/°C
kV
V/ns
V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Value
TO-220 TO-220FP TO-247
Unit
0.78 3.1
62.5
0.78 °C/W
50 °C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Value
9
290
Unit
A
mJ
Doc ID 8911 Rev 7
3/17


3Pages


STP10NK80ZFP 電子部品, 半導体
Electrical characteristics
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220
Figure 3. Thermal impedance for TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
6/17 Doc ID 8911 Rev 7

6 Page



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部品番号部品説明メーカ
STP10NK80ZFP

N-CHANNEL Power MOSFET

ST Microelectronics
ST Microelectronics


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