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Datasheet C30641 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1C30641(C306xx) Large-Area InGaAs Photodiodes

Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications including optical power meters, fiber optic test equipment, near-IR spectoscopy and instrumentation. All devices are planar passivated and feature low capacitance
PerkinElmer Optoelectronics
PerkinElmer Optoelectronics
diode
2C30641(C306xx) PIN-TYPE PHOTODIODE

C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler (Not yet available for C30665) Silicon Glass (See below for availability) 0.5mm diameter 1.0mm diameter 2.0mm di
Perkin Elmer Optoelectronics
Perkin Elmer Optoelectronics
diode


C30 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1C300MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

intronies MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE FEATURES r 16 pin ceramic dip (C300 Series) r Minimum of external components required o Easily adjusts for yoke errors o Accuracy better than 0.590 Max (C312) o Bandwidth compatible with l0MHz systems r Both geometr
Intronice
Intronice
data
2C3000NPN Transistor, 2SC3000

Ordering number:EN866C Features · FBET series. · High fT and small Cre. NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Package Dimensions unit:mm 2003A [2SC3000] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Coll
Sanyo
Sanyo
data
3C3011NPN Transistor, 2SC3011

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base v
Toshiba
Toshiba
data
4C3012NPN Transistor, 2SC3012

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING 1 2 3 Base PIN DESCRIPTION Collector;conne
ETC
ETC
data
5C301ACUPC301AC

NEC
NEC
data
6C3021NPN Transistor, 2SC3021

MITSUBISHI
MITSUBISHI
data
7C3025NPN Transistor, 2SC3025

SavantIC Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specifica
SavantIC
SavantIC
data
8C3038NPN Transistor, 2SC3038

Ordering number:EN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3038] Specifications JEDEC : TO-220AB EIAJ : SC-46
Sanyo
Sanyo
data
9C3039NPN Transistor, 2SC3039

A A A
ETC
ETC
data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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