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Número de pieza | SI7212DN | |
Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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No Preview Available ! Dual N-Channel 30-V (D-S) MOSFET
Si7212DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.036 at VGS = 10 V
0.039 at VGS = 4.5 V
ID (A)
6.8
6.6
Qg (Typ.)
7
PowerPAK® 1212-8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• 100 % Rg Tested
• Space Savings Optimized for Fast Switching
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectification
• Intermediate Driver
3.30 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7212DN-T1-E3 (Lead (Pb)-free)
Si7212DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
6.8 4.9
4.9 3.5
Pulsed Drain Current
IDM 20
Continuous Source Current (Diode Conduction)a
IS 2.2 1.1
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
10
5
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
2.6 1.3
1.4 0.69
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
RthJA
38
77
48
94 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4.3
5.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73128
S09-1815-Rev. F, 14-Sep-09
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
Si7212DN
Vishay Siliconix
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73128.
Document Number: 73128
S09-1815-Rev. F, 14-Sep-09
www.vishay.com
5
5 Page Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Dual
0.016
0(0.0.41065)
(0.405)
0.026
(0.660)
0.026
(0.660)
Return to Index
Return to Index
0.003.0939
(0.990)
(0.990)
0.152
0.1(532.860)
(3.860)
0.0608.068
(1.725)
(1.725)
0.010
(0.255)
0.039
(0.990)
0.039
(0.990)
0.010
(0.225)
0.094
(2.390)
0.025
(0.635)
0.025
(0.635)
0.030
(0.760)
0.030
(0.760)
Recommended Minimum PADs for PowerPAK 1212-8 Dual
Dimensions in Inches/(mm)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
1
Document Number: 72598
Revision: 14-Apr-08
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet SI7212DN.PDF ] |
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