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STE45NK80ZD の電気的特性と機能

STE45NK80ZDのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STE45NK80ZD
部品説明 N-CHANNEL Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STE45NK80ZD Datasheet, STE45NK80ZD PDF,ピン配置, 機能
STE45NK80ZD
N-CHANNEL 800V - 0.11- 45 A ISOTOP
Super FREDMesh™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STE45NK80ZD 800 V < 0.13 45 A 600 W
s TYPICAL RDS(on) = 0.11
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperFREDMesh™ series is obtained
through an extreme optimization of ST’s well es-
tablished strip-based PowerMESH™ layout. In ad-
dition to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary MD-
mesh™ products.
Figure 1: Package
ISOTOP
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR WELDING EQUIPMENT
Table 2: Order Codes
SALES TYPE
STE45NK80ZD
MARKING
E45NK80ZD
PACKAGE
ISOTOP
PACKAGING
TUBE
April 2005
www.DataSheet4U.com
Rev. 6
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STE45NK80ZD pdf, ピン配列
STE45NK80ZD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
800
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 150µA
2.5
3.75
4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 22.5 A
0.11 0.13
Unit
V
µA
µA
µA
V
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15V, ID = 22.5 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 720V
VDD = 400 V, ID = 20 A
RG = 4.7,VGS = 10 V
(see Figure 17)
VDD = 400 V, ID = 40 A,
VGS = 10V
Min.
Typ.
35
26000
1620
260
Max.
700
105
128
350
174
558 781
121
307
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
45 A
180 A
VSD (1) Forward On Voltage
ISD = 45 A, VGS = 0
1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs
VDD = 50 V, Tj = 25°C
(see Figure 18)
375
4.65
24.8
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs
VDD = 50 V, Tj = 150°C
(see Figure 18)
568
9.66
34
ns
µC
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STE45NK80ZD 電子部品, 半導体
STE45NK80ZD
Figure 15: Avalanche Energy vs Starting Tj
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6 Page



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部品番号部品説明メーカ
STE45NK80ZD

N-CHANNEL Power MOSFET

ST Microelectronics
ST Microelectronics


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