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20N60C2 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 20N60C2
部品説明 SPP20N60C2
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 

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20N60C2 Datasheet, 20N60C2 PDF,ピン配置, 機能
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
Ultra low gate charge
www.DataSheet4UP.ceormiodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.19
ID 20
V
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
P-TO220-3-31
3
12
Type
SPP20N60C2
SPB20N60C2
SPA20N60C2
Package
Ordering Code
P-TO220-3-1 Q67040-S4320
P-TO263-3-2 Q67040-S4322
P-TO220-3-31 Q67040-S4333
Marking
20N60C2
20N60C2
20N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 20 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
20 201)
13 131)
ID puls
EAS
40
690
40
690
Unit
A
A
mJ
EAR 1 1
IAR 20 20 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
208 34.5 W
-55...+150
°C
2002-08-12

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