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MSA-0200 の電気的特性と機能

MSA-0200のメーカーはHewlett-Packardです、この部品の機能は「Cascadable Silicon Bipolar MMIC Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MSA-0200
部品説明 Cascadable Silicon Bipolar MMIC Amplifier
メーカ Hewlett-Packard
ロゴ Hewlett-Packard ロゴ 




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MSA-0200 Datasheet, MSA-0200 PDF,ピン配置, 機能
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0200
Features
• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
Description
The MSA-0200 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Chip Outline[1]
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1] See APPLICATIONS
section, “Chip Use”.
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
Typical Biasing Configuration
R bias
VCC > 7 V
C block
IN
MSA
RFC (Optional)
C block
Vd = 5 V
OUT
5965-9695E
6-266

1 Page





MSA-0200 pdf, ピン配列
MSA-0200 Typical Scattering Parameters[1] (ZO = 50 , TA = 25°C, Id = 25 mA)
Freq.
S11
S21
GHz
Mag
Ang
dB
Mag
Ang
S12 S22
dB
Mag
Ang
Mag
Ang
0.1
.11
179 12.6
4.27 177 –18.4 .120
1 .11
–7
0.2
.11
174 12.6
4.26 172 –18.6 .117
4 .11 –12
0.4
.10
170 12.5
4.24 165 –18.4 .120
5 .12 –25
0.6
.09
166 12.5
4.22 158 –18.2 .123
7 .13 –38
0.8
.08
162 12.4
4.17 152 –18.2 .123
10
.13
–47
1.0
.06
161 12.3
4.13 144 –18.0 .126
13
.14
–55
1.5
.02 –170 12.0
3.99 126 –17.3 .137
17
.15
–72
2.0
.05 –105 11.5
3.74 109 –16.4 .152
20
.15
–89
2.5
.10 –103 10.8
3.46
97 –15.8 .163
25
.13
–91
3.0 .17 –124 9.8 3.10 83 –15.3 .172 26 .11 –100
3.5 .22 –137 8.7 2.71 68 –14.7 .184 22 .13 –94
4.0 .26 –144 7.4 2.35 55 –14.3 .192 22 .16 –85
5.0 .29 –165 5.1 1.80 35 –13.8 .203 17 .22 –76
6.0 .33 –162 3.3 1.46 20 –13.5 .211 14 .23 –82
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
14 14
12
Gain Flat to DC
10
8
12
10
6
4
2
0
0.1
0.3 0.5 1.0
3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 25 mA.
8
0.1 GHz
6 0.5 GHz
1.0 GHz
2.0 GHz
4
15 20 25 30 35 40
I d (mA)
Figure 2. Power Gain vs. Current.
12
10 Id = 40 mA
8
6
4 Id = 25 mA
2
0 Id = 18 mA
0.1 0.2 0.3 0.5
1.0 2.0 4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
7.5
Id = 18 mA
Id = 25 mA
Id = 50 mA
7.0
6.5
6.0
5.5
0.1
0.2 0.3 0.5
1.0 2.0 4.0
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
6-268
13
12
11 GP
88
7 NF 7
66
5 P1 dB 5
44
33
2
–55 –25
+25
2
+85 +125
TEMPERATURE (°C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, Id = 25 mA.


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共有リンク

Link :


部品番号部品説明メーカ
MSA-0200

Cascadable Silicon Bipolar MMIC Amplifier

Hewlett-Packard
Hewlett-Packard
MSA-0204

Cascadable Silicon Bipolar MMIC Amplifier

Hewlett-Packard
Hewlett-Packard


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