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PDF STB95NF03 Data sheet ( Hoja de datos )

Número de pieza STB95NF03
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STB95NF03 Hoja de datos, Descripción, Manual

ataSheet4U.comN-CHANNSETLrip3F0VET-0.0II0P65OSWTE- BR959MA5ODNFPF0AE3KTTYPE
VDSS
RDS(on)
ID
.DSTB95NF03
30 V <0.007 80 A
ws TYPICAL RDS(on) = 0.0065
w s STANDARD THRESHOLD DRIVE
w s 100% AVALANCHE TESTED
ms SURFACE-MOUNTING D2PAK (TO-263)
oPOWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
.cDESCRIPTION
This Power MOSFET is the latest development of
USTMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
t4shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
eless critical alignment steps therefore a remark-
able manufacturing reproducibility.
eAPPLICATIONS
hs HIGH CURRENT, HIGH SPEED SWITCHING
s DC-DC & DC-AC CONVERTERS
Ss SOLENOID AND RELAY DRIVERS
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
.DataABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
wVDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
wID()
Drain Current (continuous) at TC = 25°C
w mID Drain Current (continuous) at TC = 100°C
.coIDM(•) Drain Current (pulsed)
UPtot Total Dissipation at TC = 25°C
t4Derating Factor
edv/dt (1) Peak Diode Recovery voltage slope
eEAS (2) Single Pulse Avalanche Energy
ShTstg Storage Temperature
taTj Operating Junction Temperature
a(•) Pulse width limited by safe operating area.
(*) Current Limited by Package
www.DDecember 2003
Value
30
30
± 20
80
80
320
150
1
3.0
720
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 95A, di/dt 150A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25 oC, ID = 47.5A, VDD = 25V
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STB95NF03 pdf
STB95NF03
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
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