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PDF STB9NC60 Data sheet ( Hoja de datos )
| Número de pieza | STB9NC60 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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w.DataSheet4U.comTYPE
w STB9NC60
w STB9NC60-1
STB9NC60
STB9NC60-1
N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK
PowerMesh™ II MOSFET
VDSS
600 V
600 V
RDS(on)
< 0.75 Ω
< 0.75 Ω
ID
9.0 A
9.0 A
s TYPICAL RDS(on) = 0.6 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
ms 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
os GATE CHARGE MINIMIZED
.cDESCRIPTION
The PowerMESH™ II is the evolution of the first
Ugeneration of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
t4figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
eAPPLICATIONS
es HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
hs DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
SPOWER SUPPLIES AND MOTOR DRIVER
3
1
D2PAK
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
.DataABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS Drain-source Voltage (VGS = 0)
wVDGR
Drain-gate Voltage (RGS = 20 kΩ)
wVGS Gate- source Voltage
Value
600
600
±30
Unit
V
V
V
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1)
PTOT
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
February 2002
9A
m5.7 A
.co36 A
125 W
t4U1.0 W/°C
e3.5 V/ns
he– 55 to 150
°C
www.DataS(1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/10
1 page  
STB9NC60 / STPBNC60-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STB9NC60.PDF ] | |
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