|
|
VP0650のメーカーはSupertexです、この部品の機能は「(VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs」です。 |
部品番号 | VP0650 |
| |
部品説明 | (VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | ||
メーカ | Supertex | ||
ロゴ | |||
このページの下部にプレビューとVP0650ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Ordewri.nDgatInafSohrmeeatt4ioUn.comPVe-Crth–icaanlOnDeMl BEOnShSFanEOcTesmLenEt-MTodEe –VVPP00664550BVDSS /
wBVDGS
w -450V
m-500V
RDS(ON)
(max)
30Ω
30Ω
o† MIL visual screening available
ID(ON)
(min)
-0.2A
-0.2A
TO-39
VP0645N2
—
Order Number / Package
TO-92
—
VP0650N3
TO-220
—
VP0650N5
Die†
VP0645ND
VP0650ND
Advanced DM.OcS TechnologyHigh Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
UFlows and Ordering Information.
Features et4■ Free from secondary breakdown
e■ Low power drive requirement
h■ Ease of paralleling
■
Low C and fast switching speeds
ISS
S■ Excellent thermal stability
ta■ Integral Source-Drain diode
■ High input impedance and high gain
a■ Complementary N- and P-channel devices
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications .D Package Options■ Motor controls
w■ Converters
w■ Amplifiers
■ Switches
w om■ Power supply circuits
.c■ Drivers (relays, hammers, solenoids, lamps, memories,
Udisplays, bipolar transistors, etc.)
Absolute Maximum Ratings Sheet4Drain-to-Source Voltage
taDrain-to-Gate Voltage
aGate-to-Source Voltage
.DOperating and Storage Temperature
wSoldering Temperature*
ww* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
G DS
TO-220
TAB: DRAIN
DGS
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.
7-245
7
9
1 Page – OBSOLETE –Typical Performance Curves
Output Characteristics
VP0645/VP0650
Saturation Characteristics
-1.0 -0.5
-0.8
VGS = -10V
-0.6
-0.4
-0.2
0
0
-8V
-6V
-4V
-10 -20 -30 -40 -50
VDS (volts)
Transconductance vs. Drain Current
0.5
VVDDSS==-2-255VV
0.4
0.3
TA= -55°C
TA = 25°C
0.2
TA = 125°C
0.1
0
0 -0.1 -0.2 -0.3 -0.4 -0.5
ID (amperes)
Maximum Rated Safe Operating Area
-1.0
TO-39 (pulsed)
TO-220 (DC)
TO-39 (DC)
-0.1
TO-92 (DC)
-0.01
TC = 25°C
-0.001
-1
-10 -100
VDS (volts)
-1000
-0.4 VGS = -10V
-0.3 -6V
-0.2
-0.1 -4V
0
0 -2 -4 -6 -8 -10
VDS (volts)
Power Dissipation vs. Case Temperature
50
TO-220
40
30
20
10
TO-39
TO-92
0
0 25
50 75 100 125 150
TC (°C)
Thermal Response Characteristics
1.0
TO-220
PD = 45W
0.8 TC = 25°C
TO-39
0.6
PD = 6W
TC = 25°C
0.4
0.2
0
0.001
TO-92
PD = 1W
TC = 25°C
0.01 0.1
1.0
tp (seconds)
10
7
9
7-247
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ VP0650 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VP0650 | (VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | Supertex |