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VP0650 の電気的特性と機能

VP0650のメーカーはSupertexです、この部品の機能は「(VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 VP0650
部品説明 (VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs
メーカ Supertex
ロゴ Supertex ロゴ 




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VP0650 Datasheet, VP0650 PDF,ピン配置, 機能
Ordewri.nDgatInafSohrmeeatt4ioUn.comPVe-CrthicaanlOnDeMl BEOnShSFanEOcTesmLenEt-MTodEe VVPP00664550BVDSS /
wBVDGS
w -450V
m-500V
RDS(ON)
(max)
30
30
oMIL visual screening available
ID(ON)
(min)
-0.2A
-0.2A
TO-39
VP0645N2
Order Number / Package
TO-92
VP0650N3
TO-220
VP0650N5
Die
VP0645ND
VP0650ND
Advanced DM.OcS TechnologyHigh Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
UFlows and Ordering Information.
Features et4Free from secondary breakdown
eLow power drive requirement
hEase of paralleling
Low C and fast switching speeds
ISS
SExcellent thermal stability
taIntegral Source-Drain diode
High input impedance and high gain
aComplementary N- and P-channel devices
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications .D Package OptionsMotor controls
wConverters
wAmplifiers
Switches
w omPower supply circuits
.cDrivers (relays, hammers, solenoids, lamps, memories,
Udisplays, bipolar transistors, etc.)
Absolute Maximum Ratings Sheet4Drain-to-Source Voltage
taDrain-to-Gate Voltage
aGate-to-Source Voltage
.DOperating and Storage Temperature
wSoldering Temperature*
ww* Distance of 1.6 mm from case for 10 seconds.
BVDSS
BVDGS
± 20V
-55°C to +150°C
300°C
G DS
TO-220
TAB: DRAIN
DGS
TO-39
Case: DRAIN
SGD
TO-92
Note: See Package Outline section for dimensions.
7-245
7
9

1 Page





VP0650 pdf, ピン配列
OBSOLETE –Typical Performance Curves
Output Characteristics
VP0645/VP0650
Saturation Characteristics
-1.0 -0.5
-0.8
VGS = -10V
-0.6
-0.4
-0.2
0
0
-8V
-6V
-4V
-10 -20 -30 -40 -50
VDS (volts)
Transconductance vs. Drain Current
0.5
VVDDSS==-2-255VV
0.4
0.3
TA= -55°C
TA = 25°C
0.2
TA = 125°C
0.1
0
0 -0.1 -0.2 -0.3 -0.4 -0.5
ID (amperes)
Maximum Rated Safe Operating Area
-1.0
TO-39 (pulsed)
TO-220 (DC)
TO-39 (DC)
-0.1
TO-92 (DC)
-0.01
TC = 25°C
-0.001
-1
-10 -100
VDS (volts)
-1000
-0.4 VGS = -10V
-0.3 -6V
-0.2
-0.1 -4V
0
0 -2 -4 -6 -8 -10
VDS (volts)
Power Dissipation vs. Case Temperature
50
TO-220
40
30
20
10
TO-39
TO-92
0
0 25
50 75 100 125 150
TC (°C)
Thermal Response Characteristics
1.0
TO-220
PD = 45W
0.8 TC = 25°C
TO-39
0.6
PD = 6W
TC = 25°C
0.4
0.2
0
0.001
TO-92
PD = 1W
TC = 25°C
0.01 0.1
1.0
tp (seconds)
10
7
9
7-247


3Pages





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共有リンク

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部品番号部品説明メーカ
VP0650

(VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs

Supertex
Supertex


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