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PDF 2SK3993 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3993 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3993
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3993 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3993
2SK3993-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 32 A)
• Low Ciss: Ciss = 4770 pF TYP.
• 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±64
±256
Total Power Dissipation (TC = 25°C)
PT1 40
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 41
EAS 168
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17322EJ1V0DS00 (1st edition)
Date Published February 2005 NS CP(K)
Printed in Japan
2004
1 page  
2SK3993
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 5.0 V
6
4 10 V
2
0
-100
ID = 32 A
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
100
SWITCHING CHARACTERISTICS
VDD = 12.5 V
VGS = 10 V
RG = 10 Ω
td(off)
tf
10
0.1
tr
td(on)
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10 0 V
1
0.1
0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
Crss
VGS = 0 V
f = 1 MHz
100
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
ID = 64 A
(VDD = 5.0 V at ID = 56 A)
25
VDD = 20 V
12.5 V
20 5.0 V
12
10
8
15 6
VGS
10 4
5
VDS
2
00
0 20 40 60 80 100
QG - Gate Charge - nC
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
1 10 100
IF - Diode Forward Current - A
Data Sheet D17322EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3993.PDF ] | |
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