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PDF 2SK0123 Data sheet ( Hoja de datos )
| Número de pieza | 2SK0123 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK0123 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
s Features
q High mutual conductance gm
q Low noise voltage of NV
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VDGO
IDSO
IDGO
IGSO
PD
Topr
Tstg
20
20
2
2
2
200
−20 to +80
−55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
0.40+–00..0150
3
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Unit: mm
0.16+–00..0160
1: Drain
2: Source
3: Gate
Mini3-G1 Package
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Current consumption
ID VD = 4.5 V, CO = 10 pF, RD = 2.2 kΩ ± 1% 100
600 µA
Drain to Source cut-off current IDSS
VDS = 4.5 V, VGS = 0
95 480 µA
Mutual conductance
gm VD = 4.5 V, VGS = 0, f = 1 kHz
0.7 1.6
mS
Noise figure
NV VD = 4.5V, RD = 2.2 kΩ ± 1%
CO = 10 pF, A-curve
4 µV
GV1
−3 2
dB
Voltage gain
Voltage gain difference
GV2
GV3
∆|GV2 − GV1|
∆|GV1 − GV3|
VD = 4.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV, f = 1 kHz
VD = 12 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV, f = 1 kHz
VD = 1.5 V, RD = 2.2 kΩ ± 1%
CO = 10 pF, eG = 10 mV, f = 1 kHz
0
−4.5
0
0
3.3
− 0.3
+3.5
+3.5
dB
dB
dB
dB
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJF00005BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK0123.PDF ] | |
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