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PDF GS71116AJ Data sheet ( Hoja de datos )

Número de pieza GS71116AJ
Descripción (GS71116x) 64K x 16 1Mb Asynchronous SRAM
Fabricantes GSI Technology 
Logotipo GSI Technology Logotipo



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No Preview Available ! GS71116AJ Hoja de datos, Descripción, Manual

GS71116ATP/J/U
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
64K x 16
1Mb Asynchronous SRAM
7, 8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
Features
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 145/125/100/85 mA at
minimum cycle time
SOJ 64K x 16-Pin Configuration
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
m• Fully static operation
• Industrial Temperature Option: 40° to 85°C
o• Package line up
.cJ: 400 mil, 44-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
GP: Pb-Free 400 mil, 3244-pin TSOP Type II package
UU: 6 mm x 8 mm Fine Pitch Ball Grid Array package
GU: Pb-Free 6 mm x 8 mm Fine Pitch Ball Grid Array
t4package
• Pb-Free TSOP-II and FP-BGA packages available
eDescription
eThe GS71116A is a high speed CMOS static RAM organized
has 65,536-words by 16-bits. Static design eliminates the need
for external clocks or timing strobes. Operating on a single
S3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS71116A is available in a 6 mm x 8 mm
taFine Pitch BGA package, as well as in 400 mil SOJ and 400
mil TSOP Type-II packages.
aPin Descriptions
.DSymbol
A0A15
DQ1DQ16
wCE
wwLB
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
A4 1
A3 2
A2 3
A1 4
A0 5
Top view
CE 6
DQ1 7
DQ2 8
DQ3 9
DQ4 10
VDD 11
44-pin
VSS 12
DQ5 13
SOJ
DQ6 14
DQ7 15
DQ8 16
WE 17
A15 18
A14 19
A13 20
A12 21
NC 22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Package J
UB
Upper byte enable input
(DQ9 to DQ16)
A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14
DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
NC
WE Write enable input
OE Output enable input
VDD +3.3 V power supply
VSS Ground
NC No connect
Rev: 1.07 12/2004
1/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology

1 page




GS71116AJ pdf
GS71116ATP/J/U
DC I/O Pin Characteristics
Parameter
Symbol
Input Leakage Current
IIL
Output Leakage
Current
ILO
Output High Voltage
Output Low Voltage
VOH
VOL
Test Conditions
VIN = 0 to VDD
Output High Z
VOUT = 0 to VDD
IOH = –4 mA
ILO = +4 mA
Min
–1 uA
–1 uA
2.4
Max
1uA
1uA
0.4V
Power Supply Currents
Parameter Symbol
Operating
Supply
Current
IDD
Standby
Current
Standby
Current
ISB1
ISB2
Test Conditions
CE VIL
All other inputs
VIH or VIL
Min. cycle time
IOUT = 0 mA
CE VIH
All other inputs
VIH or VIL
Min. cycle time
CE VDD – 0.2 V
All other inputs
VDD – 0.2 V or 0.2 V
0 to 70°C
–40 to 85°C
7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns
145 mA 125 mA 100 mA 85 mA 150 mA 130 mA 105 mA 90 mA
25 mA 20 mA 20 mA 15 mA 30 mA 25 mA 25 mA 20 mA
2 mA 5 mA
Rev: 1.07 12/2004
5/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology

5 Page





GS71116AJ arduino
D
44
23
1e
22
yB
B1
GS71116ATP/J/U
44-Pin, 400 mil SOJ
L
c
A
Detail A Q
Symbol
Dimension in inch
min nom max
Dimension in mm
min nom max
A
— — 0.148 —
— 3.759
A1 0.025 — — 0.635 —
A2 0.105 0.110 0.115 2.667 2.794 2.921
B
— 0.018 —
— 0.457 —
B1 0.026 0.028 0.032 0.660 0.711 0.813
c
— 0.008 —
— 0.203 —
D 1.120 1.125 1.130 28.44 28.58 28.70
E 0.395 0.400 0.405 10.033 10.160 10.287
e — 0.05 — — 1.27 —
HE 0.435 0.440 0.445 11.049 11.176 11.303
GE 0.360 0.370 0.380 9.144 9.398 9.652
L 0.082 0.087 0.106 2.083 2.210 2.70
y
— — 0.004 —
— 0.102
Q
0o 7o
0o
7o
Notes:
1. Dimension D& E do not include interlead flash.
2. Dimension B1 does not include dambar protrusion/intrusion.
3. Controlling dimension: inches
Rev: 1.07 12/2004
11/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology

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