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PDF STP40NF12 Data sheet ( Hoja de datos )
| Número de pieza | STP40NF12 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP40NF12
N-CHANNEL 120V - 0.028Ω - 40A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STP40NF12
120 V < 0.032 Ω
s TYPICAL RDS(on) = 0.028Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
40 A
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
October 2003
Value
120
120
± 20
40
28
160
150
1
14
150
– 55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(1) ISD ≤40A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 40A, VDD = 50V
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STP40NF12
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Drain-Source Breakdown vs
Temperature
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP40NF12.PDF ] | |
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