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MC33151 の電気的特性と機能

MC33151のメーカーはON Semiconductorです、この部品の機能は「(MC34151 / MC33151) High Speed Dual MOSFET Drivers」です。


製品の詳細 ( Datasheet PDF )

部品番号 MC33151
部品説明 (MC34151 / MC33151) High Speed Dual MOSFET Drivers
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MC33151 Datasheet, MC33151 PDF,ピン配置, 機能
MC34151, MC33151
High Speed Dual
MOSFET Drivers
The MC34151/MC33151 are dual inverting high speed drivers
specifically designed for applications that require low current digital
circuitry to drive large capacitive loads with high slew rates. These
devices feature low input current making them CMOS and LSTTL
logic compatible, input hysteresis for fast output switching that is
independent of input transition time, and two high current totem pole
outputs ideally suited for driving power MOSFETs. Also included is
an undervoltage lockout with hysteresis to prevent erratic system
operation at low supply voltages.
Typical applications include switching power supplies, dc to dc
converters, capacitor charge pump voltage doublers/inverters, and
motor controllers.
These devices are available in dual–in–line and surface mount
packages.
Two Independent Channels with 1.5 A Totem Pole Output
Output Rise and Fall Times of 15 ns with 1000 pF Load
CMOS/LSTTL Compatible Inputs with Hysteresis
Undervoltage Lockout with Hysteresis
Low Standby Current
Efficient High Frequency Operation
Enhanced System Performance with Common Switching Regulator
Control ICs
Pin Out Equivalent to DS0026 and MMH0026
Representative Block Diagram
VCC 6
Logic Input A
2
+
+
+
+
5.7V
+
Drive Output A
7
Logic Input B
4
+
+
Drive Output B
5
Gnd 3
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8
1
PDIP–8
P SUFFIX
CASE 626
MARKING
DIAGRAMS
8
MC3x151P
AWL
YYWW
1
8
1
SO–8
D SUFFIX
CASE 751
8
3x151
ALYW
1
x = 3 or 4
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
PIN CONNECTIONS
N.C. 1
Logic Input A 2
Gnd 3
Logic Input B 4
8 N.C.
7 Drive Output A
6 VCC
5 Drive Output B
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
MC34151D
SO–8
98 Units/Rail
MC34151DR2
SO–8
2500 Tape & Reel
MC34151P
PDIP–8
50 Units/Rail
MC33151D
SO–8
98 Units/Rail
MC33151DR2
SO–8
2500 Tape & Reel
MC33151P
PDIP–8
50 Units/Rail
MC33151VDR2 SO–8
2500 Units/Rail
© Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 1
1
Publication Order Number:
MC34151/D

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MC33151 pdf, ピン配列
MC34151, MC33151
Logic Input
50
12
4.7 V 0.1
+
6
+
+
+
+
5.7V
2
+
4
+
7
+
5
3
Figure 1. Switching Characteristics Test Circuit
Drive Output
CL
5.0 V
Logic Input
tr, tf 10 ns
0V
10%
tPHL
90%
tPLH
90%
Drive Output
10%
tf tr
Figure 2. Switching Waveform Definitions
2.4
VCC = 12 V
2.0 TA = 25°C
1.6
1.2
0.8
0.4
0
0 2.0 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (V)
Figure 3. Logic Input Current versus
Input Voltage
12
2.2
VCC = 12 V
2.0
1.8
Upper Threshold
Low State Output
1.6
1.4 Lower Threshold
High State Output
1.2
1.0
–55
–25 0 25 50 75
TA, AMBIENT TEMPERATURE (°C)
100
Figure 4. Logic Input Threshold Voltage
versus Temperature
125
200
VCC = 12 V Overdrive Voltage is with Respect
160
CL = 1.0 nF
TA = 25°C
to the Logic Input Lower Threshold
120
200
Overdrive Voltage is with Respect
VCC = 12 V
160
to the Logic Input Lower Threshold
CL = 1.0 nF
TA = 25°C
120
80 80
40
0
–1.6 –1.2 –0.8
Vth(lower)
–0.4
0
Vin, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V)
Figure 5. Drive Output Low–to–High Propagation
Delay versus Logic Overdrive Voltage
40
0 Vth(upper)
0 1.0 2.0 3.0 4.0
Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)
Figure 6. Drive Output High–to–Low Propagation
Delay versus Logic Input Overdrive Voltage
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3Pages


MC33151 電子部品, 半導体
MC34151, MC33151
the NPN pull–up during the negative output transient, power
dissipation at high frequencies can become excessive.
Figures 19, 20, and 21 show a method of using external
Schottky diode clamps to reduce driver power dissipation.
Undervoltage Lockout
An undervoltage lockout with hysteresis prevents erratic
system operation at low supply voltages. The UVLO forces
the Drive Outputs into a low state as VCC rises from 1.4 V
to the 5.8 V upper threshold. The lower UVLO threshold is
5.3 V, yielding about 500 mV of hysteresis.
Power Dissipation
Circuit performance and long term reliability are
enhanced with reduced die temperature. Die temperature
increase is directly related to the power that the integrated
circuit must dissipate and the total thermal resistance from
the junction to ambient. The formula for calculating the
junction temperature with the package in free air is:
where:
TJ = TA + PD (RθJA)
TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
RθJA = Thermal Resistance Junction to Ambient
There are three basic components that make up total
power to be dissipated when driving a capacitive load with
respect to ground. They are:
where:
PD = PQ + PC + PT
PQ = Quiescent Power Dissipation
PC = Capacitive Load Power Dissipation
PT = Transition Power Dissipation
The quiescent power supply current depends on the
supply voltage and duty cycle as shown in Figure 16. The
device’s quiescent power dissipation is:
PQ = VCC ICCL (1–D) + ICCH (D)
where:
ICCL = Supply Current with Low State Drive
Outputs
ICCH = Supply Current with High State Drive
Outputs
D = Output Duty Cycle
The capacitive load power dissipation is directly related
to the load capacitance value, frequency, and Drive Output
voltage swing. The capacitive load power dissipation per
driver is:
where:
PC = VCC (VOH – VOL) CL f
VOH = High State Drive Output Voltage
VOL = Low State Drive Output Voltage
CL = Load Capacitance
f = frequency
When driving a MOSFET, the calculation of capacitive
load power PC is somewhat complicated by the changing
gate to source capacitance CGS as the device switches. To aid
in this calculation, power MOSFET manufacturers provide
gate charge information on their data sheets. Figure 17
shows a curve of gate voltage versus gate charge for the ON
Semiconductor MTM15N50. Note that there are three
distinct slopes to the curve representing different input
capacitance values. To completely switch the MOSFET
‘on’, the gate must be brought to 10 V with respect to the
source. The graph shows that a gate charge Qg of 110 nC is
required when operating the MOSFET with a drain to source
voltage VDS of 400 V.
16
MTM15N50
ID = 15 A
12 TA = 25°C
8.0
VDS = 100 V
8.9 nF
VDS = 400 V
4.0
2.0 nF
0
0 40
CGS =
Qg
VGS
80 120 160
Qg, GATE CHARGE (nC)
Figure 17. Gate–To–Source Voltage
versus Gate Charge
The capacitive load power dissipation is directly related to
the required gate charge, and operating frequency. The
capacitive load power dissipation per driver is:
PC(MOSFET) = VC Qg f
The flat region from 10 nC to 55 nC is caused by the
drain–to–gate Miller capacitance, occurring while the
MOSFET is in the linear region dissipating substantial
amounts of power. The high output current capability of the
MC34151 is able to quickly deliver the required gate charge
for fast power efficient MOSFET switching. By operating
the MC34151 at a higher VCC, additional charge can be
provided to bring the gate above 10 V. This will reduce the
‘on’ resistance of the MOSFET at the expense of higher
driver dissipation at a given operating frequency.
The transition power dissipation is due to extremely short
simultaneous conduction of internal circuit nodes when the
Drive Outputs change state. The transition power
dissipation per driver is approximately:
PT 9 VCC (1.08 VCC CL f – 8 y 10–4)
PT must be greater than zero.
Switching time characterization of the MC34151 is
performed with fixed capacitive loads. Figure 13 shows that
for small capacitance loads, the switching speed is limited
by transistor turn–on/off time and the slew rate of the
internal nodes. For large capacitance loads, the switching
speed is limited by the maximum output current capability
of the integrated circuit.
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共有リンク

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部品番号部品説明メーカ
MC33151

HIGH SPEED DUAL MOSFET DRIVERS

Motorola Semiconductors
Motorola Semiconductors
MC33151

(MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS

Motorola Semiconductors
Motorola Semiconductors
MC33151

(MC34151 / MC33151) High Speed Dual MOSFET Drivers

ON Semiconductor
ON Semiconductor
MC33152

HIGH SPEED DUAL MOSFET DRIVERS

Motorola Semiconductors
Motorola Semiconductors


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