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MC33151 の電気的特性と機能

MC33151のメーカーはMotorola Semiconductorsです、この部品の機能は「(MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS」です。


製品の詳細 ( Datasheet PDF )

部品番号 MC33151
部品説明 (MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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MC33151 Datasheet, MC33151 PDF,ピン配置, 機能
High Speed Dual
MOSFET Drivers
The MC34151/MC33151 are dual inverting high speed drivers specifically
designed for applications that require low current digital circuitry to drive
large capacitive loads with high slew rates. These devices feature low input
current making them CMOS and LSTTL logic compatible, input hysteresis for
fast output switching that is independent of input transition time, and two high
current totem pole outputs ideally suited for driving power MOSFETs. Also
included is an undervoltage lockout with hysteresis to prevent erratic system
operation at low supply voltages.
Typical applications include switching power supplies, dc to dc
converters, capacitor charge pump voltage doublers/inverters, and motor
controllers.
These devices are available in dual–in–line and surface mount packages.
Two Independent Channels with 1.5 A Totem Pole Output
Output Rise and Fall Times of 15 ns with 1000 pF Load
CMOS/LSTTL Compatible Inputs with Hysteresis
Undervoltage Lockout with Hysteresis
Low Standby Current
Efficient High Frequency Operation
Enhanced System Performance with Common Switching Regulator
Control ICs
Pin Out Equivalent to DS0026 and MMH0026
Order this document by MC34151/D
MC34151
MC33151
HIGH SPEED
DUAL MOSFET DRIVERS
SEMICONDUCTOR
TECHNICAL DATA
8
1
8
1
P SUFFIX
PLASTIC PACKAGE
CASE 626
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
Representative Block Diagram
VCC 6
Logic Input A
2
+
+
+
+
5.7V
+
Drive Output A
7
PIN CONNECTIONS
N.C. 1
Logic Input A 2
Gnd 3
Logic Input B 4
8 N.C.
7 Drive Output A
6 VCC
5 Drive Output B
(Top View)
Logic Input B
4
+
+
Drive Output B
5
Gnd 3
MOTOROLA ANALOG IC DEVICE DATA
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC34151D
MC34151P
TA = 0° to +70°C
SO–8
Plastic DIP
MC33151D
TA = – 40° to +85°C
MC33151P
SO–8
Plastic DIP
© Motorola, Inc. 1996
Rev 0
1

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MC33151 pdf, ピン配列
MC34151 MC33151
Figure 1. Switching Characteristics Test Circuit
12V
4.7 0.1
+
6
Logic Input
+
+
+
+
5.7V
2
+
7
50
+
+
4
5
Drive Output
CL
Figure 2. Switching Waveform Definitions
5.0 V
Logic Input
tr, tf 10 ns
0V
Drive Output
90%
10%
tPHL
90%
tPLH
10%
tf tr
3
Figure 3. Logic Input Current versus
Input Voltage
2.4
VCC = 12 V
2.0 TA = 25°C
1.6
1.2
0.8
0.4
0
0 2.0 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (V)
12
Figure 5. Drive Output Low–to–High Propagation
Delay versus Logic Overdrive Voltage
200
VCC = 12 V Overdrive Voltage is with Respect
160
CL = 1.0 nF
TA = 25°C
to the Logic Input Lower Threshold
120
80
40
0
–1.6 –1.2 –0.8
Vth(lower)
–0.4
0
Vin, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V)
MOTOROLA ANALOG IC DEVICE DATA
Figure 4. Logic Input Threshold Voltage
versus Temperature
2.2
VCC = 12 V
2.0
1.8
Upper Threshold
Low State Output
1.6
1.4 Lower Threshold
High State Output
1.2
1.0
–55
–25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Drive Output High–to–Low Propagation
Delay versus Logic Input Overdrive Voltage
200
Overdrive Voltage is with Respect
VCC = 12 V
160
to the Logic Input Lower Threshold
CL = 1.0 nF
TA = 25°C
120
80
40
0 Vth(upper)
0 1.0 2.0 3.0 4.0
Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)
3


3Pages


MC33151 電子部品, 半導体
MC34151 MC33151
the 5.8 V upper threshold. The lower UVLO threshold is 5.3 V,
yielding about 500 mV of hysteresis.
Power Dissipation
Circuit performance and long term reliability are enhanced
with reduced die temperature. Die temperature increase is
directly related to the power that the integrated circuit must
dissipate and the total thermal resistance from the junction to
ambient. The formula for calculating the junction temperature
with the package in free air is:
where:
TJ = TA + PD (RθJA)
TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
RθJA = Thermal Resistance Junction to Ambient
completely switch the MOSFET ‘on’, the gate must be
brought to 10 V with respect to the source. The graph shows
that a gate charge Qg of 110 nC is required when operating
the MOSFET with a drain to source voltage VDS of 400 V.
Figure 17. Gate–To–Source Voltage
versus Gate Charge
16
MTM15N50
ID = 15 A
12 TA = 25°C
VDS = 100 V
VDS = 400 V
8.0
8.9 nF
There are three basic components that make up total
power to be dissipated when driving a capacitive load with
respect to ground. They are:
where:
PD = PQ + PC + PT
PQ = Quiescent Power Dissipation
PC = Capacitive Load Power Dissipation
PT = Transition Power Dissipation
The quiescent power supply current depends on the
supply voltage and duty cycle as shown in Figure 16. The
device’s quiescent power dissipation is:
PQ = VCC ICCL (1–D) + ICCH (D)
where:
ICCL = Supply Current with Low State Drive
Outputs
ICCH = Supply Current with High State Drive
Outputs
D = Output Duty Cycle
The capacitive load power dissipation is directly related to
the load capacitance value, frequency, and Drive Output
voltage swing. The capacitive load power dissipation per
driver is:
where:
PC = VCC (VOH – VOL) CL f
VOH = High State Drive Output Voltage
VOL = Low State Drive Output Voltage
CL = Load Capacitance
f = frequency
4.0
2.0 nF
0
0 40
CGS =
Qg
VGS
80 120 160
Qg, GATE CHARGE (nC)
The capacitive load power dissipation is directly related to the
required gate charge, and operating frequency. The
capacitive load power dissipation per driver is:
PC(MOSFET) = VC Qg f
The flat region from 10 nC to 55 nC is caused by the
drain–to–gate Miller capacitance, occuring while the
MOSFET is in the linear region dissipating substantial
amounts of power. The high output current capability of the
MC34151 is able to quickly deliver the required gate charge
for fast power efficient MOSFET switching. By operating the
MC34151 at a higher VCC, additional charge can be provided
to bring the gate above 10 V. This will reduce the ‘on’
resistance of the MOSFET at the expense of higher driver
dissipation at a given operating frequency.
The transition power dissipation is due to extremely short
simultaneous conduction of internal circuit nodes when the
Drive Outputs change state. The transition power dissipation
per driver is approximately:
PT VCC (1.08 VCC CL f – 8 × 10–4)
PT must be greater than zero.
When driving a MOSFET, the calculation of capacitive load
power PC is somewhat complicated by the changing gate to
source capacitance CGS as the device switches. To aid in this
calculation, power MOSFET manufacturers provide gate
charge information on their data sheets. Figure 17 shows a
curve of gate voltage versus gate charge for the Motorola
MTM15N50. Note that there are three distinct slopes to the
curve representing different input capacitance values. To
Switching time characterization of the MC34151 is
performed with fixed capacitive loads. Figure 13 shows that
for small capacitance loads, the switching speed is limited by
transistor turn–on/off time and the slew rate of the internal
nodes. For large capacitance loads, the switching speed is
limited by the maximum output current capability of the
integrated circuit.
6 MOTOROLA ANALOG IC DEVICE DATA

6 Page



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部品番号部品説明メーカ
MC33151

HIGH SPEED DUAL MOSFET DRIVERS

Motorola Semiconductors
Motorola Semiconductors
MC33151

(MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS

Motorola Semiconductors
Motorola Semiconductors
MC33151

(MC34151 / MC33151) High Speed Dual MOSFET Drivers

ON Semiconductor
ON Semiconductor
MC33152

HIGH SPEED DUAL MOSFET DRIVERS

Motorola Semiconductors
Motorola Semiconductors


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