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STP14NK50ZFP の電気的特性と機能

STP14NK50ZFPのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP14NK50ZFP
部品説明 N-CHANNEL Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP14NK50ZFP Datasheet, STP14NK50ZFP PDF,ピン配置, 機能
STP14NK50Z, STP14NK50ZFP
STB14NK50Z, STB14NK50Z-1, STW14NK50Z
N-CHANNEL500V-0.34-14ATO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP14NK50Z
STP14NK50ZFP
STB14NK50Z
STB14NK50Z-1
STW14NK50Z
500 V
500 V
500 V
500 V
500 V
< 0.38
< 0.38
< 0.38
< 0.38
< 0.38
14 A
14 A
14 A
14 A
14 A
150 W
35 W
150 W
150 W
150 W
s TYPICAL RDS(on) = 0.34
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
123
I2PAK
3
2
1
TO-247
3
2
1
TO-220FP
3
1
D2PAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE
MARKING
STP14NK50Z
P14NK50Z
STP14NK50ZFP
P14NK50ZFP
STB14NK50ZT4
B14NK50Z
STB14NK50Z-1
B14NK50Z
STW14NK50Z
W14NK50Z
March 2003
PACKAGE
TO-220
TO-220FP
D2PAK
I2PAK
TO-247
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
TUBE
1/14

1 Page





STP14NK50ZFP pdf, ピン配列
STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3 3.75 4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6 A
0.34 0.38
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 8 V, ID = 6 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 400V
Test Conditions
VDD = 250 V, ID = 6 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 12 A,
VGS = 10V
Min.
Typ.
12
2000
238
55
150
Typ.
24
16
69
12
31
Max.
Max.
92
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 250 V, ID = 6 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 12 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
54
12
9.5
9
20
Max.
Unit
V
µA
µA
µA
V
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
12 A
48 A
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs
VDD = 35V, Tj = 150°C
(see test circuit, Figure 5)
470 ns
3.1 µC
13.2 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/14


3Pages


STP14NK50ZFP 電子部品, 半導体
STP14NK50Z, STP14NK50ZFP, STB14NK50Z, STB14NK50Z-1, STW14NK50Z
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Normalized BVgso vs Temperature
Maximum Avalanche Energy vs Temperature
6/14

6 Page



ページ 合計 : 14 ページ
 
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部品番号部品説明メーカ
STP14NK50ZFP

N-CHANNEL Power MOSFET

ST Microelectronics
ST Microelectronics


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