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PDF SKM500GA174D Data sheet ( Hoja de datos )
| Número de pieza | SKM500GA174D | |
| Descripción | IGBT Module | |
| Fabricantes | Semikron | |
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SKM 500 GA 174 D
Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC; ICN
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min. 4)
IEC 60721-3-3
IEC 68 T.1
Inverse Diode 8)
IF = –IC Tcase = 25/80 °C
IFM = –ICM Tcase = 25/80 °C; tp = 1 ms
IFSM tp = 10 ms; sin.; Tj = 150 °C
I2t tp = 10 ms; Tj = 150 °C
Values
1700
1700
600 / 440 5)
1200 / 880
± 20
3100
–40 ... +150 (125)
3400
class 3K7/IE32
40/125/56
600 / 440
1200 / 880
4400
96800
Units
V
V
A
A
V
W
°C
V
A
A
A
A2s
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
gfs
VGE = 0, IC = 8 mA
VGE = VCE, IC = 18 mA
VGE = 0
Tj = 25 °C
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 400 A VGE = 15 V;
IC = 500 A Tj = 25 (125) °C
VCE = 20 V, IC = 400 A
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 1200 V
VGE = –15 V / +15 V 3)
IC = 400 A, ind. load
RGon = RGoff = 3 Ω
Tj = 125 °C (VCC = 900 V/1200 V)
LS = 60 nH (VCC = 900 V/1200 V)
Inverse Diode 8)
min.
≥ VCES
4,5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VF = VEC IF = 400 A VGE = 0 V;
VF = VEC IF = 500 A Tj = 25 (125) °C
VTO Tj = 125 °C
rt Tj = 125 °C
IRRM
IF = 400 A; Tj = 25 (125) °C2)
Qrr IF = 400 A; Tj = 25 (125) °C2)
Thermal characteristics
–
–
–
–
–
–
Rthjc
Rthjc
Rthch
per IGBT
per diode D
per module
–
–
–
typ.
–
5,5
0,1
16
–
2,8(3,2)
3,1(3,7)
220
–
27
3,8
1,3
–
350
100
1100
100
170/300
135/210
2,15(1,8)
2,3(2,0)
1,3
1,6
270(550)
70(117)
–
–
–
max.
–
6,5
1
–
0,3
3,3(3,6)
–
–
1,4
–
–
–
20
–
–
–
–
–
–
2,4(2,2)
–
1,5
2,1
–
–
0,040
0,070
0,038
Units
V
V
mA
mA
µA
V
V
S
nF
nF
nF
nF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
SEMITRANS® M
Low Loss IGBT Modules
SKM 500 GA 174 D
SEMITRANS 4
GA
Features
• N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
• Low inductance case
• High short circuit capability,
self limiting
• Fast & soft inverse CAL diodes 8)
• Without hard mould
• Large clearance (13 mm) and
creepage distances (20 mm)
Typical Applications
• AC inverter drives on mains
575 - 750 VAC
• DC bus voltage 750 - 1200 VDC
• Public transport (auxiliary syst.)
• Switching (not for linear use)
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 1200 V,
–diF/dt = 5000 A/µs, VGE = 0 V
3) Use VGEoff = – 5 ... – 15 V
4) Option Visol = 4000V/1 min add suffix
„H4“ - on request
5) Limited by terminals to IC(DC) = 500 A
at Tc = Tterminal ≤ 100 °C
8) CAL = Controlled Axial Lifetime
Technology
© by SEMIKRON
000828
B 6 – 73
1 page  
SKM 500 GA 174 D
0,1
K/W
0,01
m500ga17.xls - 19
0,001
0,0001
ZthJC
0,00001
0,00001 0,0001
tp
0,001
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
0,01
0,1 1
s
0,1
m500ga17.xls - 20
K/W
0,01
0,001
ZthJC
0,0001
0,00001 0,0001
tp
0,001
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
0,01
0,1 1
s
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
1000
A
800
M500GA17.XLS-22
VCC = 1200 V
Tj = 125 °C
RG= VGE = ± 15 V
1,5Ω
800
A
700
600
M500GA17.XLS-23
RG= 1,5Ω
2,7Ω
VCC = 1200 V
Tj = 125 °C
VGE = ± 15 V
IF = 400 A
2,7Ω
600
4Ω
400
7Ω
15 Ω
200
IRR
0
0 IF 200 400 600 800 A 1000
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
500 4 Ω
400 7 Ω
300
15 Ω
200
100
IRR
0
0 2000
diF/dt
4000
6000
8000 10000
A/us
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
200
µC
180
160
140
120
M500GA17.XLS-24
RG 1,5
2,7
IF
800 A
4 Ω 600 A
VCC = 1200 V
Tj = 125 °C
VGE = ± 15 V
7Ω
15
400 A
100
80 200 A
60 100 A
40
20
Qrr
0
0 2000
diF/dt
4000
6000
8000 10000
A/us
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON
000828
B 6 – 77
5 Page | ||
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