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PDF SKM50GB063D Data sheet ( Hoja de datos )
| Número de pieza | SKM50GB063D | |
| Descripción | IGBT Module | |
| Fabricantes | Semikron | |
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Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/75 °C
Tcase = 25/75 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
Inverse Diode
IF = –IC Tcase = 25/80 °C
IFM = –ICM Tcase = 25/80 °C; tp = 1 ms
IFSM tp = 10 ms; sin.; Tj = 150 °C
I2t tp = 10 ms; Tj = 150 °C
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 1,5 mA
VGE = VCE, IC = 1 mA
VGE = 0
Tj = 25 °C
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 30 A VGE = 15 V;
IC = 50 A Tj = 25 (125) °C
VCE = 20 V, IC = 50 A
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 300 V
VGE = –15 V / +15 V3)
IC = 50 A, ind. load
RGon = RGoff = 22 Ω
Tj = 125 °C
Inverse Diode 8)
VF = VEC IF = 50 A VGE = 0 V;
Tj = 25 (125 °C)
VTO Tj = 125 °C
rt
IRRM
Tj = 125 °C
IF = 50 A; Tj = 125 °C2)
Qrr IF = 50 A; Tj = 125 °C2)
Thermal characteristics
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
© by SEMIKRON
Values
600
600
70 / 50
140 / 100
± 20
250
–40 ... +150 (125)
2500
Class F
40/125/56
75 / 50
140 / 100
440
970
Units
V
V
A
A
V
W
°C
V
SEMITRANS® M
Superfast NPT-IGBT
Modules
SKM 50 GB 063 D
A
A
A SEMITRANS 2
A2s
min.
≥ VCES
4,5
–
–
–
–
–
20
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,1
3
–
1,8(2,0)
2,1(2,4)
–
–
2800
300
200
–
50
40
300
30
2,5
1,8
max.
–
6,5
1,5
–
100
–
2,5(2,8)
–
350
–
–
–
30
–
–
–
–
–
–
Units
V
V
mA
mA
nA
V
V
S
pF
pF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
– 1,45(1,35) 1,7
––
– 10
– 31
– 3,2
0,9
15
–
–
V
V
mΩ
A
µC
– – 0,5 °C/W
– – 1,0 °C/W
– – 0,05 °C/W
0898
GB
Features
• N channel, homogeneous Silicon
structure (NPT- Non punch-
through IGBT)
• Low tail current with low
temperature dependence
• High short circuit capability, self
limiting if term. G is clamped to E
• Pos. temp.-coeff. of VCEsat
• 50 % less turn off losses 9)
• 30 % less short circuit current 9)
• Very low Cies, Coes, Cres 9)
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
• Switching (not for linear use)
• Switched mode power supplies
• UPS
• Three phase inverters for servo /
AC motor speed control
• Pulse frequencies also above
10 kHz
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 300 V,
–diF/dt = 800 A/µs, VGE = 0 V
3) Use VGEoff = –5... –15 V
8) CAL = Controlled Axial Lifetime
Technology
9) Compared to PT-IGBT
Cases and mech. data → B 6 – 12
B6–7
1 page  
1
K/W
M 50GB 06.X LS -19
1
K/W
M 50GB 06.X LS -20
0,1 0,1 D=0,5
0,2
D=0,50
0,20
0,10
0,01
0,05
0,02 0,01
0,1
0,05
0,02
0,01
0,01 single pulse
ZthJC
single pulse
0,001
0,00001 0,0001
tp
0,001
0,01
0,1
s
1
ZthJC
0,001
0,00001 0,0001
tp
0,001
0,01
0,1
s
1
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
M50GB 06.X LS -22
80 VCC = 300 V 80
A
RG=
10 Ω
Tj = 125 °C A
VGE = ± 15 V
60 60
M50GB 06.X LS -23
RG=
10 Ω
VCC = 300 V
Tj = 125 °C
VGE = ± 15 V
IF = 50 A
15 Ω
15 Ω
40 40
25 Ω
25 Ω
40 Ω 40 Ω
20
80 Ω
20 80 Ω
IRR IRR
0
0 20 40 60 80 100
IF A
0
0
diF/dt
1000
2000
3000
4000
A/µs
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (di/dt)
6
µC
5
25 Ω
40 Ω
4 80 Ω
15 Ω
M 50GB 06.X LS -24
RG=
10 Ω IF=
75 A
VCC = 300 V
Tj = 125 °C
VGE = ± 15 V
50 A
38 A
3
25 A
2
13 A
1
Qrr
0
0 1000
diF/dt
2000
3000
4000 5000
A/µs
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON
0898
B 6 – 11
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| PDF Descargar | [ Datasheet SKM50GB063D.PDF ] | |
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