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KRA303EのメーカーはKorea Electronicsです、この部品の機能は「(KRA301E - KRA306E) EPITAXIAL PLANAR PNP TRANSISTOR」です。 |
部品番号 | KRA303E |
| |
部品説明 | (KRA301E - KRA306E) EPITAXIAL PLANAR PNP TRANSISTOR | ||
メーカ | Korea Electronics | ||
ロゴ | |||
このページの下部にプレビューとKRA303Eダウンロード(pdfファイル)リンクがあります。 Total 6 pages
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(kή) R2(kή)
KRA301E
4.7
4.7
KRA302E
10
10
KRA303E
22
22
KRA304E
47
47
KRA305E
2.2
47
KRA306E
4.7
47
KRA301E~KRA306E
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A 1.60+_ 0.10
B 0.85+_ 0.10
13
C 0.70+_ 0.10
D 0.27+0.10/-0.05
E 1.60+_ 0.10
G 1.00+_ 0.10
H 0.50
J 0.13+_ 0.05
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
ESM
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
KRA301Eᴕ306E
KRA301E
KRA302E
Input Voltage
KRA303E
KRA304E
KRA305E
KRA306E
Output Current
Power Dissipation
Junction Temperature
KRA301Eᴕ306E
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
RATING
-50
-20, 10
-30, 10
-40, 10
-40, 10
-12, 5
-20, 5
-100
100
150
-55ᴕ150
UNIT
V
V
mA
mW
ᴱ
ᴱ
MARK SPEC
TYPE KRA301E
MARK
PA
KRA302E
PB
KRA303E
PC
KRA304E
PD
KRA305E
PE
KRA306E
PF
Marking
Type Name
1999. 6. 8
Revision No : 0
1/6
1 Page KRA301E~KRA306E
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Rise Time
KRA301E
KRA302E
KRA303E
KRA304E
KRA305E
tr
KRA306E
Switching
Time
Storage Time
Fall Time
KRA301E
KRA302E
KRA303E
KRA304E
KRA305E
KRA306E
KRA301E
KRA302E
KRA303E
KRA304E
KRA305E
tstg
tf
KRA306E
TEST CONDITION
VO=-5V
VIN=-5V
RL=1kή
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.07
0.06
0.2
0.24
0.02
0.07
1.1
1.1
1.1
1.1
1.1
1.1
0.15
0.24
0.38
0.63
0.1
0.2
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
ỌS
1999. 6. 8
Revision No : 0
3/6
3Pages KRA301E~KRA306E
300 KRA301E
VO =-5V
100
50
30
GI - IO
Ta=100 C
Ta=25 C
Ta=-25 C
10
5
-0.5 -1
-3 -10 -30
OUTPUT CURRENT IO (mA)
-100
300 KRA302E
VO =-5V
100
50
30
GI - IO
Ta=100 C
Ta=25 C
Ta=-25 C
10
5
-0.5 -1
-3 -10 -30
OUTPUT CURRENT IO (mA)
-100
300 KRA303E
100
50
30
GI - IO
Ta=100 C
Ta=25 C
Ta=-25 C
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
300 KRA304E
GI - IO
Ta=100 C
100
Ta=25 C
50 Ta=-25 C
30
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
KRA305E
300
GI - IO
K
Ta=100 C
100
Ta=25 C
Ta=-25 C
50
30
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
1999. 6. 8
Revision No : 0
300 RA306E
GI - IO
Ta=100 C
100
Ta=25 C
50 Ta=-25 C
30
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
6/6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ KRA303E データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
KRA303 | (KRA301 - KRA306) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA303E | (KRA301E - KRA306E) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA303V | (KRA301V - KRA306V) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |