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KRA306VのメーカーはKorea Electronicsです、この部品の機能は「(KRA301V - KRA306V) EPITAXIAL PLANAR PNP TRANSISTOR」です。 |
部品番号 | KRA306V |
| |
部品説明 | (KRA301V - KRA306V) EPITAXIAL PLANAR PNP TRANSISTOR | ||
メーカ | Korea Electronics | ||
ロゴ | |||
このページの下部にプレビューとKRA306Vダウンロード(pdfファイル)リンクがあります。 Total 6 pages
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON(+)
BIAS RESISTOR VALUES
TYPE NO. R1(kή) R2(kή)
KRA301V
4.7
4.7
KRA302V
10
10
KRA303V
22
22
KRA304V
47
47
KRA305V
2.2
47
KRA306V
4.7
47
KRA301V~KRA306V
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
2 DIM MILLIMETERS
A 1.2 +_0.05
B 0.8 +_0.05
1 3 C 0.5 +_ 0.05
D 0.3 +_ 0.05
E 1.2 +_ 0.05
G 0.8 +_ 0.05
PP
H 0.40
J 0.12+_ 0.05
K 0.2 +_ 0.05
P5
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
VSM
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
KRA301Vᴕ306V
KRA301V
KRA302V
Input Voltage
KRA303V
KRA304V
KRA305V
KRA306V
Output Current
Power Dissipation
Junction Temperature
KRA301Vᴕ306V
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
RATING
-50
-20, 10
-30, 10
-40, 10
-40, 10
-12, 5
-20, 5
-100
100
150
-55ᴕ150
UNIT
V
V
mA
mW
ᴱ
ᴱ
MARK SPEC
TYPE KRA301V
MARK
PA
KRA302V
PB
KRA303V
PC
KRA304V
PD
KRA305V
PE
KRA306V
PF
Marking
Type Name
2001. 7. 23
Revision No : 0
1/6
1 Page KRA301V~KRA306V
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Rise Time
KRA301V
KRA302V
KRA303V
KRA304V
KRA305V
tr
KRA306V
Switching
Time
Storage Time
Fall Time
KRA301V
KRA302V
KRA303V
KRA304V
KRA305V
KRA306V
KRA301V
KRA302V
KRA303V
KRA304V
KRA305V
tstg
tf
KRA306V
TEST CONDITION
VO=-5V
VIN=-5V
RL=1kή
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.07
0.06
0.2
0.24
0.02
0.07
1.1
1.1
1.1
1.1
1.1
1.1
0.15
0.24
0.38
0.63
0.1
0.2
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
ỌS
2001. 7. 23
Revision No : 0
3/6
3Pages KRA301V~KRA306V
300 KRA301V
VO =-5V
100
50
30
GI - IO
Ta=100 C
Ta=25 C
Ta=-25 C
10
5
-0.5 -1
-3 -10 -30
OUTPUT CURRENT IO (mA)
-100
300 KRA302V
VO =-5V
100
50
30
GI - IO
Ta=100 C
Ta=25 C
Ta=-25 C
10
5
-0.5 -1
-3 -10 -30
OUTPUT CURRENT IO (mA)
-100
300 KRA303V
100
50
30
GI - IO
Ta=100 C
Ta=25 C
Ta=-25 C
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
300 KRA304V
GI - IO
Ta=100 C
100
Ta=25 C
50 Ta=-25 C
30
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
KRA305V
300
GI - IO
K
Ta=100 C
100
Ta=25 C
Ta=-25 C
50
30
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
2001. 7. 23
Revision No : 0
300 RA306V
GI - IO
Ta=100 C
100
Ta=25 C
50 Ta=-25 C
30
10
5
-0.5 -1
VO =-5V
-3 -10 -30 -100
OUTPUT CURRENT IO (mA)
6/6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ KRA306V データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
KRA306 | (KRA301 - KRA306) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA306E | (KRA301E - KRA306E) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |
KRA306V | (KRA301V - KRA306V) EPITAXIAL PLANAR PNP TRANSISTOR | Korea Electronics |