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Datasheet IRL2203NS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IRL2203NS | Power MOSFET, Transistor PD - 94394
HEXFET® Power MOSFET
l l l l l l
IRL2203NS IRL2203NL
VDSS = 30V RDS(on) = 7.0mΩ
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
G S
ID = 116A
Description
Advanced HEXFET® Power MOSFET |  International Rectifier | mosfet |
| 2 | IRL2203NS | Power MOSFET, Transistor IRL2203NS/L
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 7.0mΩ
G S
ID = 116A
Description
Advanced HEXFET® Power MOSFETs |  FreesCale | mosfet |
| 3 | IRL2203NSPbF | Power MOSFET, Transistor PD - 95219A
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l 100% RG Tested l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te | International Rectifier | mosfet |
IRL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRL1004 | HEXFET Power MOSFET
PD - 91702B
IRL1004
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
D
VDSS = 40V RDS(on) = 0.0065Ω
G
ID = 130A International Rectifier mosfet | | |
| 2 | IRL1004L | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
| 3 | IRL1004LPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
| 4 | IRL1004PBF | Power MOSFET, Transistor l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec International Rectifier mosfet | | |
| 5 | IRL1004S | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
| 6 | IRL1004SPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
| 7 | IRL1104 | HEXFET Power MOSFET
PD -91805
IRL1104
HEXFET® Power MOSFET
Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description
q
D
VDSS = 40V
G S
RDS(on) = 0.008Ω ID = 104A
International Rectifier mosfet | |
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