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Datasheet MBM29XL12DF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MBM29XL12DF | PAGE MODE FLASH MEMORY CMOS 128M BIT SPANSION Flash Memory
Data Sheet
TM
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be |  Fujitsu Media Devices | cmos |
| 2 | MBM29XL12DF-70 | PAGE MODE FLASH MEMORY CMOS 128M BIT SPANSIONTM Flash Memory
Data Sheet
September 2003
This document specifies SPANSIONTM memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offer |  Fujitsu | cmos |
| 3 | MBM29XL12DF-80 | PAGE MODE FLASH MEMORY CMOS 128M BIT SPANSIONTM Flash Memory
Data Sheet
September 2003
This document specifies SPANSIONTM memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offer | Fujitsu | cmos |
MBM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MBM200A6 | IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES Hitachi Semiconductor igbt | | |
| 2 | MBM200GR12 | IGBT POWER MODULE Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No. IGBT-SP-99024(R1)
MBM200GR12
[Rated 200A/1200V, Dual-pack type]
FEATURES
· Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) �  Hitachi igbt | | |
| 3 | MBM200GR6 | IGBT POWER MODULE Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No.IGBT-SP-99020(R1)
MBM200GR6
[Rated 200A/600V, Dual-pack type]
FEATURES
· Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · H Hitachi igbt | | |
| 4 | MBM200GS12AW | IGBT POWER MODULE IGBT MODU ODULE
MBM200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 80 16
E2
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
3-M5 2- φ5.6
16
Hitachi igbt | | |
| 5 | MBM200GS6AW | IGBT POWER MODULE IGBT MODU ODULE
MBM200GS6AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 4-Fast-on Terminal #110
G2 E2
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
Hitachi igbt | | |
| 6 | MBM200JS12AW | IGBT POWER MODULE IGBT MODU ODULE
MBM200JS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
4- φ 6.5
20
108 93 18
20
4 Hitachi igbt | | |
| 7 | MBM200JS12EW | IGBT POWER MODULE IGBT MODU ODULE
MBM200JS12EW
Silicon N-channel IGBT OUTLINE DRAWING
4-Fast-on Terminal #110
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
4- φ Hitachi igbt | |
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