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FDT461N の電気的特性と機能

FDT461NのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel Logic Level PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDT461N
部品説明 N-Channel Logic Level PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDT461N Datasheet, FDT461N PDF,ピン配置, 機能
FDT461N
N-Channel Logic Level PowerTrench® MOSFET
100V, 0.4A, 2.5
Features
• rDS(ON) = 1.45(Typ.), VGS = 4.5V, ID = 0.4A
• Qg(tot) = 2.36nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
Applications
• Servo Motor Load Control
• DC-DC converters
April 2004
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
SOT-223
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA= 110oC/W)
Continuous (TA = 25oC, VGS = 4.5V, RθJA= 110oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
G
Thermal Characteristics
RθJA
RθJA
RθJA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in2
D
DS
Ratings
100
±20
0.54
0.4
Figure 4
6.3
1.13
9
-55 to 150
110
128
147
Units
V
V
A
A
A
mJ
W
mW/oC
oC
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
461
Device
FDT461N
Package
SOT-223
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1

1 Page





FDT461N pdf, ピン配列
Typical Characteristics TA = 25°C unless otherwise noted
1.2 0.6
1.0
0.8 0.4 VGS = 10V
0.6 VGS = 4.5V
0.4 0.2
0.2
0
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
150
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50 75 100 125
TA, CASE TEMPERATURE (oC)
150
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
1 DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
101 102
103
Figure 3. Normalized Maximum Transient Thermal Impedance
10
VGS = 4.5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TA
125
1
0.4
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101 102
103
Figure 4. Peak Current Capability
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1


3Pages


FDT461N 電子部品, 半導体
Test Circuits and Waveforms (Continued)
VGS
Ig(REF)
VDS
L
DUT
+
VDD
-
Figure 16. Gate Charge Test Circuit
VDD
VGS
VDS
Qg(TOT)
Qg(4.5)
VGS = 4.5V
VGS = 10V
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qgd
Figure 17. Gate Charge Waveforms
VDS
RL
VGS
RGS
DUT
+
VDD
-
VGS
Figure 18. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
10%
VGS
10%
0
50%
PULSE WIDTH
90%
50%
Figure 19. Switching Time Waveforms
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1

6 Page



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共有リンク

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部品番号部品説明メーカ
FDT461N

N-Channel Logic Level PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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