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PDF MOC8111 Data sheet ( Hoja de datos )
| Número de pieza | MOC8111 | |
| Descripción | PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor | |
| Logotipo |  |
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MOC8111
PHOTOTRANSISTOR
NO BASE CONNECTION OPTOCOUPLER
FEATURES
• Current Transfer Ratio 20% Min.
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
•
V
DE
VDE 0884 Available with Option 1
DESCRIPTION
The MOC8111 is an optocoupler consisting of a
Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP 6 pin package.
The coupling device is suitable for signal trans-
mission between two electrically separated cir-
cuits. The potential difference between the
circuits to be coupled is not allowed to exceed
the maximum permissible reference voltages.
In contrast to the IL1 the base terminal is not con-
nected, resulting in a substantially improved com-
mon-mode interference immunity.
Maximum Ratings (TA=25°C)
Emitter
Reverse Voltage .............................................. 6 V
DC Forward Current ................................... 60 mA
Surge Forward Current (t≤10 µs) .................. 2.5 A
Total Power Dissipation............................ 100 mW
Detector
Collector-Emitter Breakdown Voltage ............ 30 V
Collector Current ....................................... 50 mA
Collector Current (t≤1 ms) ........................ 150 mA
Total Power Dissipation............................ 150 mW
Package
Isolation Test Voltage between
Emitter and Detector, Refer to
Standard Climate 23/50
DIN 50014 ....................................5300 VACRMS
Creepage ...................................................≥7 mm
Clearance ...................................................≥7 mm
Isolation Thickness between
Emitter and Detector ............................≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 ..............175
Isolation Resistance
VIO=500 V, TA=25°C.................................1012Ω
VIO=500 V, TA=100°C...............................1011Ω
Storage Temperature Range ..... –55°C to +150°C
Ambient Temperature Range..... –55°C to +100°C
Soldering Temperature (max. 10 s,
dip soldering distance to
seating plane ≥1.5 mm) ...........................260°C
Package Dimensions in inches (mm)
Pin One ID.
321
.248 (6.30)
.256 (6.50)
Anode 1
Cathode 2
6 Base
5 Collector
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC 3
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Electrical Characteristics (TA=25°C)
Parameter
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
Reverse Leakage
Current
Capacitance
Detector
Collector-Emitter
Breakdown
Voltage
Collector-Emitter
Leakage Current
Emitter-Collector
Breakdown
Voltage
Collector-Emitter
Capacitance
VF
IR
CJ
BVCEO
ICEO
VECO
CCE
30
7
1.15 1.5
0.05 10
V
µA
25 pF
V
1 50 nA
V
7 pF
IF=10 mA
VR=6 V
V=0, f=1 MHz
IC=1 µA
VCE=10 V
IE=10 µA
VCE=0 V, f=1 MHz
Package
Collector Satura-
tion Voltage
Output Collector
Current
Turn On Time
VCESAT
IC
TON
2
Turn Off Time
TOFF
0.15 0.4 V
5 mA
7.5 20 µs
5.7 20 µs
IC=500 µA
IF=10 mA
IF=10 mA
VCE=10 V
VCC=10 V
RL=100 Ω,
IC=2 mA,
see Figure 1
5–221
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MOC8111.PDF ] | |
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