DataSheet.jp

GT60M323 の電気的特性と機能

GT60M323のメーカーはToshibaです、この部品の機能は「Silicon N Channel IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 GT60M323
部品説明 Silicon N Channel IGBT
メーカ Toshiba
ロゴ Toshiba ロゴ 




このページの下部にプレビューとGT60M323ダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

GT60M323 Datasheet, GT60M323 PDF,ピン配置, 機能
GT60M323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323
Voltage Resonance Inverter Switching Application
Enhancement mode type
High speed
: tf = 0.09 µs (typ.) (IC = 60 A)
Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
FRD included between emitter and collector
TO-3P(LH) (Toshiba package name)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector @ Tc = 100°C
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Rating
900
±25
31
60
120
15
120
80
200
150
55 to 150
Unit
V
V
A
A
A
W
°C
°C
Max
0.625
4.0
Unit
°C/W
°C/W
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Equivalent Circuit
Collector
Gate
Emitter
Marking
TOSHIBA
GT60M323
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2004-07-06

1 Page





GT60M323 pdf, ピン配列
120
Common
emitter
100 Tc = -40°C
IC – VCE
10 9
15 8
80
VGE = 20 V
60
40
7
20
6
0
0123
4
Collector-emitter voltage VCE (V)
5
GT60M323
120
Common
emitter
100 Tc = 25°C
IC – VCE
10
15
80 VGE = 20 V
9
8
60
7
40
20
6
0
0123
4
Collector-emitter voltage VCE (V)
5
120
Common
emitter
100 Tc = 125°C
80
60
40
IC – VCE
VGE = 20 V
15
9
8
10
7
20 6
0
0123
45
Collector-emitter voltage VCE (V)
80
Common
emitter
VCE = 5V
60
IC – VGE
40
20
Tc = 125°C 40
25
0
0 2 4 6 8 10
Gate-emitter voltage VGE (V)
4
Common
emitter
VGE = 15 V
3
VCE (sat) – Tc
2
1
80
60
30
IC = 10 A
0
60 20
20
60 100 140
Case temperature Tc (°C)
3
2004-07-06


3Pages


GT60M323 電子部品, 半導体
GT60M323
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
6 2004-07-06

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ GT60M323 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
GT60M322

Silicon N Channel IGBT

Toshiba
Toshiba
GT60M323

Silicon N Channel IGBT

Toshiba
Toshiba
GT60M324

SILICON N CHANNEL IGBT

Toshiba
Toshiba


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap