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STD12N06 の電気的特性と機能

STD12N06のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD12N06
部品説明 N-CHANNEL POWER MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STD12N06 Datasheet, STD12N06 PDF,ピン配置, 機能
STD12N05
STD12N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD12N05
STD12N06
VDSS
50 V
60 V
R DS( on)
< 0.15
< 0.15
ID
12 A
12 A
s TYPICAL RDS(on) = 0.1
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
VDG R
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
ID M()
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Val ue
STD12N05
STD12N06
50 60
50 60
± 20
12
8
48
45
0. 3
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/10

1 Page





STD12N06 pdf, ピン配列
STD12N05/STD12N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 25 V ID = 6 A
RG = 50
VGS = 10 V
(see test circuit figure)
VDD = 40 V ID = 12 A
RG = 50
VGS = 10 V
(see test circuit figure)
VDD = 40 V ID = 12 A VGS = 10 V
Min.
Typ.
40
80
210
15
6
5
Max.
60
120
25
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 12 A
RGS = 50 VGS = 10 V
(see test circuit figure)
Min.
Typ.
30
40
80
Max.
45
60
120
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 12 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 12 A
VDD = 25 V
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
12
48
Unit
A
A
60
0. 12
4
1.5
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/10


3Pages


STD12N06 電子部品, 半導体
STD12N05/STD12N06
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
6/10

6 Page



ページ 合計 : 10 ページ
 
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ダウンロード
[ STD12N06 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
STD12N05

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STD12N05L

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STD12N06

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STD12N06L

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics


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