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STD12N06のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | STD12N06 |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD12N06ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
STD12N05
STD12N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD12N05
STD12N06
VDSS
50 V
60 V
R DS( on)
< 0.15 Ω
< 0.15 Ω
ID
12 A
12 A
s TYPICAL RDS(on) = 0.1 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
VDG R
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
ID M(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1996
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Val ue
STD12N05
STD12N06
50 60
50 60
± 20
12
8
48
45
0. 3
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/10
1 Page STD12N05/STD12N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 25 V ID = 6 A
RG = 50 Ω
VGS = 10 V
(see test circuit figure)
VDD = 40 V ID = 12 A
RG = 50 Ω
VGS = 10 V
(see test circuit figure)
VDD = 40 V ID = 12 A VGS = 10 V
Min.
Typ.
40
80
210
15
6
5
Max.
60
120
25
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 12 A
RGS = 50 Ω VGS = 10 V
(see test circuit figure)
Min.
Typ.
30
40
80
Max.
45
60
120
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 12 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 12 A
VDD = 25 V
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
12
48
Unit
A
A
60
0. 12
4
1.5
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/10
3Pages STD12N05/STD12N06
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
6/10
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ STD12N06 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STD12N05 | N-CHANNEL POWER MOSFET | ST Microelectronics |
STD12N05L | N-CHANNEL POWER MOSFET | ST Microelectronics |
STD12N06 | N-CHANNEL POWER MOSFET | ST Microelectronics |
STD12N06L | N-CHANNEL POWER MOSFET | ST Microelectronics |