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STD15NF10のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | STD15NF10 |
| |
部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD15NF10ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
® STD15NF10
N - CHANNEL 100V - 0.073Ω - 15A TO-252
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on )
ID
STD15NF10
100 V < 0.08 Ω
15 A
s TYPICAL RDS(on) = 0.073 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VG S
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( 2) starting Tj = 25 oC, ID =24A , VDD = 50V
April 2000
Va l u e
Unit
100 V
100 V
± 20
V
15 A
10 A
60 A
45 W
0.3 W/oC
9 V/ns
75 mJ
-65 to 175
oC
175 oC
(1) ISD ≤ 80 A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMA
1/6
1 Page STD15NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 12 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V ID = 15 A VGS = 10 V
Min.
Typ.
58
45
Max.
Unit
ns
ns
30 nC
6 nC
10 nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 27 V
ID = 12 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
Vclamp = 80 V
ID = 15 A
RG = 4.7 Ω
VGS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
49
17
43
36
39
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 15 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 15 A
VDD = 50 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Min.
Typ.
100
375
7.5
Max.
15
60
1.5
Unit
A
A
V
ns
nC
A
3/6
3Pages STD15NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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6 Page | |||
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PDF ダウンロード | [ STD15NF10 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STD15NF10 | N-CHANNEL POWER MOSFET | ST Microelectronics |