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STD16NE06 の電気的特性と機能

STD16NE06のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD16NE06
部品説明 N-CHANNEL POWER MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STD16NE06 Datasheet, STD16NE06 PDF,ピン配置, 機能
® STD16NE06
N - CHANNEL 60V - 0.07- 16A DPAK/IPAK
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
ID
STD16NE06
60 V < 0.085 16 A
s TYPICAL RDS(on) = 0.07
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”STripFET” strip-ba-
sed process.The resulting transistor shows extre-
mely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufac-
turing reproducibility.
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM ()
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
February 2000
Va l u e
Un it
60 V
60 V
± 20
V
16 A
11 A
64 A
40
0.26
W
W /o C
7 V/ns
-65 to 175
oC
175 oC
( 1) ISD 16 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
1/9

1 Page





STD16NE06 pdf, ピン配列
STD16NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 30 V
ID = 10 A
RG =4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 48 V ID = 16 A VGS = 10 V
Min.
Typ.
20
45
25
9.7
6.2
Max.
30
60
35
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 10 A
RG =4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
8
25
38
Max.
11
34
50
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 16 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 16 A
di/dt = 100 A/µs
VDD = 30 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
16
64
Unit
A
A
1.5
50
115
4.5
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/9


3Pages


STD16NE06 電子部品, 半導体
STD16NE06
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
STD16NE06

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STD16NE06L

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics
STD16NE06L-1

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics


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