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STD16NE06L-1のメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | STD16NE06L-1 |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD16NE06L-1ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
® STD16NE06L-1
N - CHANNEL 60V - 0.07 Ω - 16A - TO-251
STripFET™ " POWER MOSFET
TYPE
VDSS
RDS(on)
STD16NE06L-1
60 V < 0.085 Ω
s TYPICAL RDS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
ID
16 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size™ " strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
PRELIMINARY DATA
3
2
1
DPAK
TO-251
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
Value
Unit
60 V
60 V
± 20
V
16 A
11 A
64 A
40 W
0.3 W/oC
7
-65 to 175
175
(1) ISD ≤16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/5
1 Page ST16NE06L1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 30 V
RG =4.7 Ω
ID = 10 A
VGS = 5 V
Qg Total Gate Charge
VDD = 48 V ID = 20 A VGS = 5 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Min.
Typ.
20
45
Max.
30
60
Unit
ns
ns
14 20 nC
8 nC
4 nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 20 A
RG =4.7 Ω VGS = 5 V
Min.
Typ.
10
25
42
Max.
14
34
60
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 16 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 20 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
20
80
Unit
A
A
1.5
65
130
4
V
ns
µC
A
3/5
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ STD16NE06L-1 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STD16NE06L-1 | N-CHANNEL POWER MOSFET | ST Microelectronics |